Issued Patents All Time
Showing 76–100 of 255 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10134763 | Gate top spacer for finFET | Veeraraghavan S. Basker, Shogo Mochizuki, Alexander Reznicek | 2018-11-20 |
| 10115824 | Forming a contact for a semiconductor device | Zuoguang Liu, Shogo Mochizuki, Hiroaki Niimi, Ruilong Xie | 2018-10-30 |
| 10109722 | Etch-resistant spacer formation on gate structure | Ruilong Xie, Zhenxing Bi, Pietro Montanini, Eric R. Miller, Balasubramanian Pranatharthiharan +2 more | 2018-10-23 |
| 10079299 | Self aligned top extension formation for vertical transistors | Sanjay C. Mehta, Shogo Mochizuki, Alexander Reznicek | 2018-09-18 |
| 10068920 | Silicon germanium fins on insulator formed by lateral recrystallization | Alexander Reznicek, Veeraraghavan S. Basker, Shogo Mochizuki, Nicolas L. Breil | 2018-09-04 |
| 10032883 | Silicon germanium heterojunction bipolar transistor structure and method | Rajendran Krishnasamy, Kathryn T. Schonenberg | 2018-07-24 |
| 9997610 | Gate stack formed with interrupted deposition processes and laser annealing | Takashi Ando, Aritra Dasgupta, Balaji Kannan, Unoh Kwon | 2018-06-12 |
| 9997407 | Voidless contact metal structures | Veeraraghavan S. Basker, Nicolas L. Breil, Shogo Mochizuki, Alexander Reznicek | 2018-06-12 |
| 9997361 | Gate stack formed with interrupted deposition processes and laser annealing | Takashi Ando, Aritra Dasgupta, Balaji Kannan, Unoh Kwon | 2018-06-12 |
| 9997348 | Wafer stress control and topography compensation | Timothy A. Brunner, Donghun Kang, Byeong Y. Kim | 2018-06-12 |
| 9985114 | Fin field effect transistor structure and method to form defect free merged source and drain epitaxy for low external resistance | Veeraraghavan S. Basker, Shogo Mochizuki, Alexander Reznicek | 2018-05-29 |
| 9978750 | Low resistance source/drain contacts for complementary metal oxide semiconductor (CMOS) devices | Praneet Adusumilli, Dechao Guo, Zuoguang Liu, Rajasekhar Venigalla, Tenko Yamashita | 2018-05-22 |
| 9972682 | Low resistance source drain contact formation | Zuoguang Liu, Shogo Mochizuki, Hiroaki Niimi, Chun-Chen Yeh | 2018-05-15 |
| 9954103 | Bottom spacer formation for vertical transistor | Sanjay C. Mehta, Shogo Mochizuki, Alexander Reznicek | 2018-04-24 |
| 9941391 | Method of forming vertical transistor having dual bottom spacers | Sanjay C. Mehta, Shogo Mochizuki, Alexander Reznicek | 2018-04-10 |
| 9941302 | Structure and method to form defect free high-mobility semiconductor fins on insulator | Veeraraghavan S. Basker, Shogo Mochizuki, Alexander Reznicek | 2018-04-10 |
| 9917060 | Forming a contact for a semiconductor device | Zuoguang Liu, Shogo Mochizuki, Hiroaki Niimi, Ruilong Xie | 2018-03-13 |
| 9911849 | Transistor and method of forming same | Veeraraghavan S. Basker, Nicolas L. Breil, Shogo Mochizuki, Alexander Reznicek | 2018-03-06 |
| 9905692 | SOI FinFET fins with recessed fins and epitaxy in source drain region | Alexander Reznicek, Shogo Mochizuki, Veeraraghavan S. Basker, Nicolas L. Breil | 2018-02-27 |
| 9859216 | Voidless contact metal structures | Veeraraghavan S. Basker, Nicolas L. Breil, Shogo Mochizuki, Alexander Reznicek | 2018-01-02 |
| 9859121 | Multiple nanosecond laser pulse anneal processes and resultant semiconductor structure | Aritra Dasgupta | 2018-01-02 |
| 9799513 | Localized elastic strain relaxed buffer | Veeraraghavan S. Basker, Shogo Mochizuki, Alexander Reznicek | 2017-10-24 |
| 9799736 | High acceptor level doping in silicon germanium | Mona A. Ebrish, Shogo Mochizuki, Alexander Reznicek | 2017-10-24 |
| 9773901 | Bottom spacer formation for vertical transistor | Sanjay C. Mehta, Shogo Mochizuki, Alexander Reznicek | 2017-09-26 |
| 9748382 | Self aligned top extension formation for vertical transistors | Sanjay C. Mehta, Shogo Mochizuki, Alexander Reznicek | 2017-08-29 |