MB

Michael P. Belyansky

IBM: 57 patents #1,416 of 70,183Top 3%
Infineon Technologies Ag: 2 patents #4,439 of 7,486Top 60%
ET Elpis Technologies: 1 patents #31 of 121Top 30%
FS Freeescale Semiconductor: 1 patents #2,021 of 3,767Top 55%
📍 Halfmoon, NY: #2 of 23 inventorsTop 9%
🗺 New York: #1,461 of 115,490 inventorsTop 2%
Overall (All Time): #41,340 of 4,157,543Top 1%
58
Patents All Time

Issued Patents All Time

Showing 26–50 of 58 patents

Patent #TitleCo-InventorsDate
10141188 Resist having tuned interface hardmask layer for EUV exposure Ravi K. Bonam, Anuja E. DeSilva, Scott D. Halle 2018-11-27
10134592 Resist having tuned interface hardmask layer for EUV exposure Ravi K. Bonam, Anuja E. DeSilva, Scott D. Halle 2018-11-20
9929012 Resist having tuned interface hardmask layer for EUV exposure Ravi K. Bonam, Anuja E. DeSilva, Scott D. Halle 2018-03-27
9613956 Self-aligned punchthrough stop doping in bulk finFET by reflowing doped oxide Kangguo Cheng, Ramachandra Divakaruni 2017-04-04
9397002 Self-aligned punchthrough stop doping in bulk finFET by reflowing doped oxide Kangguo Cheng, Ramachandra Divakaruni 2016-07-19
8557649 Method for controlling structure height Rajasekhar Venigalla, Michael V. Aquilino, Massud Aminpur, Unoh Kwon, Christopher D. Sheraw +1 more 2013-10-15
8420542 Method of patterned image reversal Viraj Y. Sardesai, Rajasekhar Venigalla 2013-04-16
7863646 Dual oxide stress liner Xiangdong Chen, Thomas W. Dyer, Geng Wang, Haining Yang 2011-01-04
7750410 Structure and method to improve channel mobility by gate electrode stress modification Dureseti Chidambarrao, Omer H. Dokumaci, Bruce B. Doris, Oleg Gluschenkov 2010-07-06
7741166 Oxidation method for altering a film structure Diane C. Boyd, Bruce B. Doris, Oleg Gluschenkov 2010-06-22
7691701 Method of forming gate stack and structure thereof Siddarth A. Krishnan, Unoh Kwon, Naim Moumen, Ravikumar Ramachandran, James K. Schaeffer +3 more 2010-04-06
7659160 Field effect transistors (FETS) with inverted source/drain metallic contacts, and method of fabrication same Dureseti Chidambarrao, Lawrence A. Clevenger, Kaushik A. Kumar, Carl Radens 2010-02-09
7648871 Field effect transistors (FETS) with inverted source/drain metallic contacts, and method of fabricating same Dureseti Chidambarrao, Lawrence A. Clevenger, Kaushik A. Kumar, Carl Radens 2010-01-19
7618853 Field effect transistors with dielectric source drain halo regions and reduced miller capacitance Dureseti Chidambarrao, Oleg Gluschenkov 2009-11-17
7585704 Method of producing highly strained PECVD silicon nitride thin films at low temperature Oleg Gluschenkov, Ying Li, Anupama Mallikarjunan 2009-09-08
7569848 Mobility enhanced CMOS devices Bruce B. Doris, Oleg Gluschenkov 2009-08-04
7488658 Stressed semiconductor device structures having granular semiconductor material Bruce B. Doris, Diane C. Boyd, Dureseti Chidambarrao, Oleg Gluschenkov 2009-02-10
7342266 Field effect transistors with dielectric source drain halo regions and reduced miller capacitance Dureseti Chidambarrao, Oleg Gluschenkov 2008-03-11
7273638 High density plasma oxidation Oleg Glushenkov, Andreas Knorr 2007-09-25
7271049 Method of forming self-aligned low-k gate cap Oleg Gluschenkov, Jack A. Mandelman, Bruce B. Doris 2007-09-18
7230296 Self-aligned low-k gate cap Oleg Gluschenkov, Jack A. Mandelman, Bruce B. Doris 2007-06-12
7205206 Method of fabricating mobility enhanced CMOS devices Bruce B. Doris, Oleg Gluschenkov 2007-04-17
7202516 CMOS transistor structure including film having reduced stress by exposure to atomic oxygen Diane C. Boyd, Bruce B. Doris, Oleg Gluschenkov 2007-04-10
7122849 Stressed semiconductor device structures having granular semiconductor material Bruce B. Doris, Diane C. Boyd, Dureseti Chidambarrao, Oleg Gluschenkov 2006-10-17
7081393 Reduced dielectric constant spacer materials integration for high speed logic gates Joyce C. Liu, Hsing-Jen Wann, Richard S. Wise, Hongwen Yan 2006-07-25