Patent Leaderboard
USPTO Patent Rankings Data through Sept 30, 2025
KC

Kangguo Cheng

IBM: 2575 patents #1 of 70,183Top 1%
Globalfoundries: 269 patents #3 of 4,424Top 1%
TETessera: 34 patents #14 of 271Top 6%
SSStmicroelectronics Sa: 19 patents #57 of 1,676Top 4%
ASAdeia Semiconductor Solutions: 13 patents #1 of 57Top 2%
ETElpis Technologies: 12 patents #1 of 121Top 1%
CEA: 6 patents #716 of 7,956Top 9%
GUGlobalfoundries U.S.: 5 patents #206 of 665Top 35%
Samsung: 5 patents #22,466 of 75,807Top 30%
RERenesas Electronics: 4 patents #1,016 of 4,529Top 25%
IBInternational Business: 1 patents #4 of 119Top 4%
Schenectady, NY: #1 of 1,353 inventorsTop 1%
New York: #1 of 115,490 inventorsTop 1%
Overall (All Time): #5 of 4,157,543Top 1%
2819 Patents All Time

Issued Patents All Time

Showing 2,201–2,225 of 2,819 patents

Patent #TitleCo-InventorsDate
9240355 On-chip diode with fully depleted semicondutor devices Ali Khakifirooz, Ghavam G. Shahidi, Davood Shahrjerdi 2016-01-19
9236463 Compressive strained III-V complementary metal oxide semiconductor (CMOS) device Thomas N. Adam, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek 2016-01-12
9236389 Embedded flash memory fabricated in standard CMOS process with self-aligned contact Ramachandra Divakaruni, Subramanian S. Iyer, Ali Khakifirooz 2016-01-12
9236447 Asymmetric spacers Ali Khakifirooz, Richard S. Wise 2016-01-12
9236480 Methods of forming finFET semiconductor devices using a replacement gate technique and the resulting devices Ruilong Xie, Xiuyu Cai, Ali Khakifirooz 2016-01-12
9228994 Nanochannel electrode devices Joseph Ervin, Juntao Li, Chengwen Pei, Geng Wang 2016-01-05
9224607 Dual epitaxy region integration Ali Khakifirooz, Shom Ponoth, Raghavasimhan Sreenivasan 2015-12-29
9224822 High percentage silicon germanium alloy fin formation Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek 2015-12-29
9224811 Stacked semiconductor device Ali Khakifirooz, Alexander Reznicek, Dominic J. Schepis 2015-12-29
9224801 Multilayer MIM capacitor Joseph Ervin, Chengwen Pei, Ravi M. Todi, Geng Wang 2015-12-29
9224654 Fin capacitor employing sidewall image transfer Ramachandra Divakaruni, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita 2015-12-29
9219129 Inverted thin channel mosfet with self-aligned expanded source/drain Bruce B. Doris, Ali Khakifirooz, Douglas C. La Tulipe, Jr. 2015-12-22
9219023 3D chip stack having encapsulated chip-in-chip Mukta G. Farooq, Louis L. Hsu 2015-12-22
9219068 FinFET with dielectric isolation by silicon-on-nothing and method of fabrication Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita 2015-12-22
9219078 Simplified multi-threshold voltage scheme for fully depleted SOI MOSFETs Bruce B. Doris, Ali Khakifirooz, Qing Liu, Nicolas Loubet, Scott Luning 2015-12-22
9219114 Partial FIN on oxide for improved electrical isolation of raised active regions Eric C. Harley, Terence B. Hook, Ali Khakifirooz, Henry K. Utomo, Reinaldo Vega 2015-12-22
9219139 Semiconductor devices having fin structures, and methods of forming semiconductor devices having fin structures Thomas N. Adam, Ali Khakifirooz, Alexander Reznicek 2015-12-22
9219154 Method of fabricating electrostatically enhanced fins and stacked nanowire field effect transistors Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek 2015-12-22
9214567 Nanowire compatible E-fuse Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek 2015-12-15
9214462 Recessed source drain contact regions independent of device pitch by unmerged epitaxy on fin portions Ali Khakifirooz, Eric D. Marshall, Alexander Reznicek, Benjamen N. Taber 2015-12-15
9214378 Undercut insulating regions for silicon-on-insulator device Bruce B. Doris, Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita 2015-12-15
9214553 Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device Xiuyu Cai, Ruilong Xie, Ajey Poovannummoottil Jacob, Witold P. Maszara, Ali Khakifirooz 2015-12-15
9214397 Structure and method to modulate threshold voltage for high-K metal gate field effect transistors (FETs) Bruce B. Doris, Steven J. Holmes, Ali Khakifirooz, Pranita Kerber, Shom Ponoth +2 more 2015-12-15
9209065 Engineered substrate and device for co-integration of strained silicon and relaxed silicon Bruce B. Doris, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek 2015-12-08
9209094 Fin field effect transistor with dielectric isolation and anchored stressor elements Ramachandra Divakaruni, Ali Khakifirooz, Kern Rim 2015-12-08