Issued Patents All Time
Showing 2,176–2,200 of 2,819 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9269629 | Dummy fin formation by gas cluster ion beam | Balasubramanian S. Haran, Ali Khakifirooz, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2016-02-23 |
| 9269627 | Fin cut on SIT level | Ali Khakifirooz, Alexander Reznicek, Tenko Yamashita | 2016-02-23 |
| 9269589 | Dense finFET SRAM | Bruce B. Doris, Ali Khakifirooz, Ghavam G. Shahidi | 2016-02-23 |
| 9269575 | Trench sidewall protection for selective epitaxial semiconductor material formation | Bruce B. Doris, Hong He, Ali Khakifirooz | 2016-02-23 |
| 9263584 | Field effect transistors employing a thin channel region on a crystalline insulator structure | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-02-16 |
| 9263466 | CMOS with dual raised source and drain for NMOS and PMOS | Bruce B. Doris, Balasubramanian S. Haran, Ali Khakifirooz | 2016-02-16 |
| 9263465 | CMOS with dual raised source and drain for NMOS and PMOS | Bruce B. Doris, Balasubramanian S. Haran, Ali Khakifirooz | 2016-02-16 |
| 9263454 | Semiconductor structure having buried conductive elements | Emre Alptekin, Pooja R. Batra, Ramachandra Divakaruni, Johnathan E. Faltermeier, Reinaldo Vega | 2016-02-16 |
| 9263453 | Secondary use of aspect ratio trapping holes as eDRAM structure | Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2016-02-16 |
| 9263449 | FinFET and fin-passive devices | Ramachandra Divakaruni, Ali Khakifirooz, Theodorus E. Standaert | 2016-02-16 |
| 9257536 | FinFET with crystalline insulator | Thomas N. Adam, Ali Khakifirooz, Alexander Reznicek, Raghavasimhan Sreenivasan | 2016-02-09 |
| 9257350 | Manufacturing process for finFET device | Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2016-02-09 |
| 9252242 | Semiconductor structure with deep trench thermal conduction | Theodorus E. Standaert, Junjun Li, Balasubramanian Pranatharthi Haran, Shom Ponoth, Tenko Yamashita | 2016-02-02 |
| 9252017 | Stacked nanowire | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-02-02 |
| 9252016 | Stacked nanowire | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-02-02 |
| 9252014 | Trench sidewall protection for selective epitaxial semiconductor material formation | Bruce B. Doris, Hong He, Ali Khakifirooz | 2016-02-02 |
| 9251979 | Techniques for fabricating Janus sensors | Qing Cao, Zhengwen Li, Fei Liu, Zhen Zhang | 2016-02-02 |
| 9251978 | Techniques for fabricating Janus sensors | Qing Cao, Zhengwen Li, Fei Liu, Zhen Zhang | 2016-02-02 |
| 9246003 | FINFET structures with fins recessed beneath the gate | Eric C. Harley, Yue Ke, Ali Khakifirooz, Alexander Reznicek | 2016-01-26 |
| 9245981 | Dielectric filler fins for planar topography in gate level | Ramachandra Divakaruni, Bruce B. Doris, Ali Khakifirooz, Edward J. Nowak, Kern Rim | 2016-01-26 |
| 9245903 | High voltage metal oxide semiconductor field effect transistor integrated into extremely thin semiconductor on insulator process | Bruce B. Doris, Ali Khakifirooz, Ghavam G. Shahidi | 2016-01-26 |
| 9245892 | Semiconductor structure having buried conductive elements | Emre Alptekin, Pooja R. Batra, Ramachandra Divakaruni, Johnathan E. Faltermeier, Reinaldo Vega | 2016-01-26 |
| 9245807 | Integrated circuit with a thin body field effect transistor and capacitor | Bruce B. Doris, Ali Khakifirooz, Ghavam G. Shahidi | 2016-01-26 |
| 9240497 | Junction field effect transistor with an epitaxially grown gate structure | Tak H. Ning, Ali Khakifirooz, Pranita Kerber | 2016-01-19 |
| 9240447 | finFETs containing improved strain benefit and self aligned trench isolation structures | Johnathan E. Faltermeier, Ali Khakifirooz | 2016-01-19 |