Issued Patents All Time
Showing 2,151–2,175 of 2,819 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9299617 | Locally isolated protected bulk FinFET semiconductor device | Raghavasimhan Sreenivasan | 2016-03-29 |
| 9293588 | FinFET with a silicon germanium alloy channel and method of fabrication thereof | Bruce B. Doris, Hong He, Ali Khakifirooz | 2016-03-22 |
| 9293583 | Finfet with oxidation-induced stress | Bruce B. Doris, Ali Khakifirooz, Kern Rim | 2016-03-22 |
| 9293576 | Semiconductor device with low-k gate cap and self-aligned contact | Ali Khakifirooz, Alexander Reznicek, Charan V. Surisetty | 2016-03-22 |
| 9293532 | Gate-all-around nanowire MOSFET and method of formation | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-03-22 |
| 9293530 | High aspect ratio trapping semiconductor with uniform height and isolated from bulk substrate | Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-03-22 |
| 9293520 | Method of forming substrate contact for semiconductor on insulator (SOI) substrate | Geng Wang, Roger A. Booth, Jr., Joseph Ervin, Chengwen Pei, Ravi M. Todi | 2016-03-22 |
| 9293474 | Dual channel hybrid semiconductor-on-insulator semiconductor devices | Bruce B. Doris, Ali Khakifirooz, Qing Liu, Laurent Grenouillet, Yannick Le Tiec +1 more | 2016-03-22 |
| 9293463 | CMOS transistors including gate spacers of the same thickness | Veeraraghavan S. Basker, Ali Khakifirooz | 2016-03-22 |
| 9293459 | Method and structure for improving finFET with epitaxy source/drain | Ali Khakifirooz, Alexander Reznicek, Tenko Yamashita | 2016-03-22 |
| 9293373 | Method for fabricating CMOS finFETs with dual channel material | Ali Khakifirooz, Alexander Reznicek, Pouya Hashemi | 2016-03-22 |
| 9287272 | Metal trench capacitor and improved isolation and methods of manufacture | Roger A. Booth, Jr., Joseph Ervin, Chengwen Pei, Ravi M. Todi, Geng Wang | 2016-03-15 |
| 9287264 | Epitaxially grown silicon germanium channel FinFET with silicon underlayer | Eric C. Harley, Judson R. Holt, Gauri Karve, Yue Ke, Derrick Liu +4 more | 2016-03-15 |
| 9287130 | Method for single fin cuts using selective ion implants | Xiuyu Cai, Ajey Poovannummoottil Jacob, Ruilong Xie, Bruce B. Doris, Jason R. Cantone +7 more | 2016-03-15 |
| 9281390 | Structure and method for forming programmable high-K/metal gate memory device | Roger A. Booth, Jr., Chandrasekara Kothandaraman, Chengwen Pei | 2016-03-08 |
| 9281247 | Strained silicon and strained silicon germanium on insulator field-effect transistor | Stephen W. Bedell, Bruce B. Doris, Ali Khakifirooz, Devendra K. Sadana | 2016-03-08 |
| 9281198 | Method of fabricating a semiconductor device including embedded crystalline back-gate bias planes | Thomas N. Adam, Ali Khakifirooz, Alexander Reznicek, Raghavasimhan Sreenivasan | 2016-03-08 |
| 9276113 | Structure and method to make strained FinFET with improved junction capacitance and low leakage | Bruce B. Doris, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2016-03-01 |
| 9276079 | Semiconductor device exhibiting reduced parasitics and method for making same | Bruce B. Doris, Keith Kwong Hon-Wong | 2016-03-01 |
| 9276002 | Integrated circuit structure with bulk silicon FinFET | Ali Khakifirooz, Qizhi Liu, Edward J. Nowak, Jed H. Rankin | 2016-03-01 |
| 9275911 | Hybrid orientation fin field effect transistor and planar field effect transistor | Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2016-03-01 |
| 9275854 | Compound semiconductor integrated circuit and method to fabricate same | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-03-01 |
| 9269815 | FinFET semiconductor device with a recessed liner that defines a fin height of the FinFet device | Xiuyu Cai, Ruilong Xie, Ali Khakifirooz | 2016-02-23 |
| 9269792 | Method and structure for robust finFET replacement metal gate integration | Shom Ponoth, Raghavasimhan Sreenivasan, Theodorus E. Standaert, Tenko Yamashita | 2016-02-23 |
| 9269634 | Self-aligned metal gate CMOS with metal base layer and dummy gate structure | Bruce B. Doris, Ying Zhang | 2016-02-23 |