Issued Patents All Time
Showing 2,101–2,125 of 2,819 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9349840 | Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device | Xiuyu Cai, Ruilong Xie, Ajey Poovannummoottil Jacob, Witold P. Maszara, Ali Khakifirooz | 2016-05-24 |
| 9349838 | Semiconductor structure with deep trench thermal conduction | Balasubramanian Pranatharthi Haran, Junjun Li, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2016-05-24 |
| 9349835 | Methods for replacing gate sidewall materials with a low-k spacer | Ali Khakifirooz, Alexander Reznicek, Charan V. Surisetty | 2016-05-24 |
| 9349809 | Aspect ratio trapping and lattice engineering for III/V semiconductors | Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-05-24 |
| 9349808 | Double aspect ratio trapping | Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2016-05-24 |
| 9349730 | Fin transformation process and isolation structures facilitating different Fin isolation schemes | Ajey Poovannummoottil Jacob, Bruce B. Doris, Nicolas Loubet, Prasanna Khare, Ramachandra Divakaruni | 2016-05-24 |
| 9349658 | Methods of forming fin isolation regions on finFET semiconductor devices using an oxidation-blocking layer of material | Ajey Poovannummoottil Jacob, Bruce B. Doris, Ali Khakifirooz, Kern Rim | 2016-05-24 |
| 9349594 | Non-planar semiconductor device with aspect ratio trapping | Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-05-24 |
| 9343550 | Silicon-on-nothing FinFETs | Ali Khakifirooz, Alexander Reznicek, Dominic J. Schepis | 2016-05-17 |
| 9343529 | Method of formation of germanium nanowires on bulk substrates | Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-05-17 |
| 9343320 | Pattern factor dependency alleviation for eDRAM and logic devices with disposable fill to ease deep trench integration with fins | Joseph Ervin, Juntao Li, Chengwen Pei, Geng Wang | 2016-05-17 |
| 9337315 | FinFET spacer formation by oriented implantation | Veeraraghavan S. Basker, Bruce B. Doris, Johnathan E. Faltermeier | 2016-05-10 |
| 9337259 | Structure and method to improve ETSOI MOSFETS with back gate | Bruce B. Doris, Pranita Kerber, Ali Khakifirooz, Balasubramanian Pranatharthiharan | 2016-05-10 |
| 9337254 | Integrated FinFET capacitor | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2016-05-10 |
| 9337196 | III-V FinFET CMOS with III-V and germanium-containing channel closely spaced | Ali Khakifirooz, Alexander Reznicek, Ghavam G. Shahidi | 2016-05-10 |
| 9337050 | Methods of forming fins for finFET semiconductor devices and the selective removal of such fins | Ruilong Xie, Xiuyu Cai | 2016-05-10 |
| 9331201 | Multi-height FinFETs with coplanar topography background | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-05-03 |
| 9331177 | Semiconductor structure with deep trench thermal conduction | Balasubramanian Pranatharthi Haran, Junjun Li, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2016-05-03 |
| 9330983 | CMOS NFET and PFET comparable spacer width | Injo Ok, Soon-Cheon Seo | 2016-05-03 |
| 9330908 | Semiconductor structure with aspect ratio trapping capabilities | Thomas N. Adam, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-05-03 |
| 9324870 | Fin field effect transistor including asymmetric raised active regions | Veeraraghavan S. Basker, Ali Khakifirooz | 2016-04-26 |
| 9324867 | Method to controllably etch silicon recess for ultra shallow junctions | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-04-26 |
| 9324797 | Gate-all-around nanowire MOSFET and method of formation | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-04-26 |
| 9324796 | Gate-all-around nanowire MOSFET and method of formation | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-04-26 |
| 9324795 | Gate-all-around nanowire MOSFET and method of formation | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-04-26 |