Issued Patents All Time
Showing 2,076–2,100 of 2,819 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9373637 | Epitaxial semiconductor resistor with semiconductor structures on same substrate | Thomas N. Adam, Ali Khakifirooz, Alexander Reznicek | 2016-06-21 |
| 9373624 | FinFET devices including epitaxially grown device isolation regions, and a method of manufacturing same | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2016-06-21 |
| 9373618 | Integrated FinFET capacitor | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2016-06-21 |
| 9373507 | Defective P-N junction for backgated fully depleted silicon on insulator mosfet | Bruce B. Doris, Laurent Grenouillet, Ali Khakifirooz, Yannick Le Tiec, Qing Liu +1 more | 2016-06-21 |
| 9368572 | Vertical transistor with air-gap spacer | Tak H. Ning | 2016-06-14 |
| 9368512 | Double diamond shaped unmerged epitaxy for tall fins in tight pitch | Alexander Reznicek, Dominic J. Schepis, Charan V. Surisetty | 2016-06-14 |
| 9368492 | Forming fins of different materials on the same substrate | Ali Khakifirooz, Alexander Reznicek, Dominic J. Schepis | 2016-06-14 |
| 9368343 | Reduced external resistance finFET device | Shom Ponoth, Raghavasimhan Sreenivasan, Theodorus E. Standaert, Tenko Yamashita | 2016-06-14 |
| 9362400 | Semiconductor device including dielectrically isolated finFETs and buried stressor | Bruce B. Doris, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2016-06-07 |
| 9362383 | Highly scaled tunnel FET with tight pitch and method to fabricate same | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2016-06-07 |
| 9362362 | FinFET with dielectric isolated channel | Ali Khakifirooz, Alexander Reznicek, Soon-Cheon Seo | 2016-06-07 |
| 9362355 | Nanosheet MOSFET with full-height air-gap spacer | Bruce B. Doris, Michael A. Guillorn, Xin Miao | 2016-06-07 |
| 9362310 | Method of manufacturing a FinFET device using a sacrificial epitaxy region for improved fin merge and FinFET device formed by same | Thomas N. Adam, Bruce B. Doris, Hong He, Ali Khakifirooz, Alexander Reznicek | 2016-06-07 |
| 9362309 | FinFET and method of fabrication | Thomas N. Adam, Ali Khakifirooz, Alexander Reznicek | 2016-06-07 |
| 9362285 | Structure and method to increase contact area in unmerged EPI integration for CMOS FinFETs | Veeraraghavan S. Basker, Ali Khakifirooz | 2016-06-07 |
| 9362182 | Forming strained fins of different material on a substrate | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-06-07 |
| 9362179 | Method to form dual channel semiconductor material fins | Ryan O. Jung, Fee Li Lie, Eric R. Miller, John R. Sporre, Sean Teehan | 2016-06-07 |
| 9362178 | FinFET including varied fin height | Qing Cao, Zhengwen Li, Fei Liu | 2016-06-07 |
| 9362170 | Dielectric liner for a self-aligned contact via structure | Veeraraghavan S. Basker, Ali Khakifirooz | 2016-06-07 |
| 9356119 | MOSFETs with reduced contact resistance | Bruce B. Doris, Ali Khakifirooz, Pranita Kerber | 2016-05-31 |
| 9356046 | Structure and method for forming CMOS with NFET and PFET having different channel materials | Bruce B. Doris, Steven J. Holmes, Ali Khakifirooz | 2016-05-31 |
| 9356027 | Dual work function integration for stacked FinFET | Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-05-31 |
| 9356019 | Integrated circuit with on chip planar diode and CMOS devices | Ali Khakifirooz, Pranita Kerber, Ghavam G. Shahidi | 2016-05-31 |
| 9349868 | Gate all-around FinFET device and a method of manufacturing same | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2016-05-24 |
| 9349861 | Silicon-on-insulator substrates having selectively formed strained and relaxed device regions | Bruce B. Doris, Ali Khakifirooz, Devendra K. Sadana | 2016-05-24 |