Issued Patents All Time
Showing 2,051–2,075 of 2,819 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9397215 | FinFET with reduced source and drain resistance | Juntao Li, Xin Miao, Junli Wang | 2016-07-19 |
| 9397152 | Multilayer MIM capacitor | Joseph Ervin, Chengwen Pei, Ravi M. Todi, Geng Wang | 2016-07-19 |
| 9397094 | Semiconductor structure with an L-shaped bottom plate | Wilfried E. Haensch, Ali Khakifirooz, Davood Shahrjerdi | 2016-07-19 |
| 9397002 | Self-aligned punchthrough stop doping in bulk finFET by reflowing doped oxide | Michael P. Belyansky, Ramachandra Divakaruni | 2016-07-19 |
| 9391204 | Asymmetric FET | Joseph Ervin, Juntao Li, Chengwen Pei, Geng Wang | 2016-07-12 |
| 9391091 | MOSFET with work function adjusted metal backgate | Bruce B. Doris, Pranita Kerber, Ali Khakifirooz | 2016-07-12 |
| 9391077 | SiGe and Si FinFET structures and methods for making the same | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-07-12 |
| 9391069 | MIM capacitor with enhanced capacitance formed by selective epitaxy | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek, Raghavasimhan Sreenivasan | 2016-07-12 |
| 9390939 | Methods of forming MIS contact structures for semiconductor devices and the resulting devices | Ruilong Xie, Xiuyu Cai, Ali Khakifirooz | 2016-07-12 |
| 9390925 | Silicon—germanium (SiGe) fin formation | Ali Khakifirooz, Alexander Reznicek, Dominic J. Schepis | 2016-07-12 |
| 9389319 | Colorimetric radiation dosimetry based on functional polymer and nanoparticle hybrid | Qing Cao, Zhengwen Li, Fei Liu, Zhen Zhang | 2016-07-12 |
| 9385231 | Device structure with increased contact area and reduced gate capacitance | Thomas N. Adam, Ali Khakifirooz, Alexander Reznicek | 2016-07-05 |
| 9385218 | Method and structure for forming dielectric isolated FinFET with improved source/drain epitaxy | Pouya Hashemi, Alexander Reznicek | 2016-07-05 |
| 9385023 | Method and structure to make fins with different fin heights and no topography | Joel P. de Souza, Ali Khakifirooz, Alexander Reznicek, Dominic J. Schepis | 2016-07-05 |
| 9379218 | Fin formation in fin field effect transistors | Bruce B. Doris, Hong He, Ali Khakifirooz, Yunpeng Yin | 2016-06-28 |
| 9379184 | Secure chip with physically unclonable function | Qing Cao, Fei Liu | 2016-06-28 |
| 9379177 | Deep trench capacitor | Joseph Ervin, Chengwen Pei, Ravi M. Todi, Geng Wang | 2016-06-28 |
| 9379135 | FinFET semiconductor device having increased gate height control | Ali Khakifirooz, Shom Ponoth, Raghavasimhan Sreenivasan | 2016-06-28 |
| 9379111 | Method of co-integration of strained silicon and strained germanium in semiconductor devices including fin structures | Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-06-28 |
| 9379110 | Method of fabrication of ETSOI CMOS device by sidewall image transfer (SIT) | Juntao Li | 2016-06-28 |
| 9379025 | Method of forming source/drain contacts in unmerged FinFETs | Veeraraghavan S. Basker, Ali Khakifirooz | 2016-06-28 |
| 9378972 | Integration of dense and variable pitch fin structures | Matthew E. Colburn, Bruce B. Doris, Ali Khakifirooz | 2016-06-28 |
| 9378948 | FinFET structures having silicon germanium and silicon fins | Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2016-06-28 |
| 9373702 | Carbon-doped cap for a raised active semiconductor region | Zhengwen Li, Qing Cao, Fei Liu, Zhen Zhang | 2016-06-21 |
| 9373639 | Thin channel-on-insulator MOSFET device with n+ epitaxy substrate and embedded stressor | Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2016-06-21 |