Issued Patents All Time
Showing 2,126–2,150 of 2,819 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9324792 | FinFET including varied fin height | Qing Cao, Zhengwen Li, Fei Liu | 2016-04-26 |
| 9324790 | Self-aligned dual-height isolation for bulk FinFET | Murat Kerem Akarvardar, Steven Bentley, Bruce B. Doris, Jody A. Fronheiser, Ajey Poovannummoottil Jacob +2 more | 2016-04-26 |
| 9324709 | Self-aligned gate contact structure | Veeraraghavan S. Basker, Ali Khakifirooz, Viraj Y. Sardesai, Raghavasimhan Sreenivasan | 2016-04-26 |
| 9318582 | Method of preventing epitaxy creeping under the spacer | Veeraraghavan S. Basker, Ali Khakifirooz, Sreenivasan Raghavasimhan | 2016-04-19 |
| 9318580 | U-shaped semiconductor structure | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2016-04-19 |
| 9318578 | FinFET spacer formation by oriented implantation | Veeraraghavan S. Basker, Bruce B. Doris, Johnathan E. Faltermeier | 2016-04-19 |
| 9318574 | Method and structure for enabling high aspect ratio sacrificial gates | Ryan O. Jung, Fee Li Lie, Jeffrey C. Shearer, John R. Sporre, Sean Teehan | 2016-04-19 |
| 9318553 | Nanowire device with improved epitaxy | Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-04-19 |
| 9318489 | Complex circuits utilizing fin structures | Bruce B. Doris, Ali Khakifirooz, Kern Rim | 2016-04-19 |
| 9318384 | Dielectric liner for a self-aligned contact via structure | Veeraraghavan S. Basker, Ali Khakifirooz | 2016-04-19 |
| 9312383 | Self-aligned contacts for vertical field effect transistors | Wilfried E. Haensch, Ali Khakifirooz, Davood Shahrjerdi | 2016-04-12 |
| 9312367 | FinFET with a silicon germanium alloy channel and method of fabrication thereof | Bruce B. Doris, Hong He, Ali Khakifirooz | 2016-04-12 |
| 9312360 | FinFET with epitaxial source and drain regions and dielectric isolated channel region | Ramachandra Divakaruni, Ali Khakifirooz, Alexander Reznicek, Soon-Cheon Seo | 2016-04-12 |
| 9312275 | FinFET with reduced capacitance | Veeraraghavan S. Basker, Ali Khakifirooz, Charles W. Koburger, III | 2016-04-12 |
| 9312273 | Structure and method to reduce crystal defects in epitaxial fin merge using nitride deposition | Thomas N. Adam, Ali Khakifirooz, Alexander Reznicek, Raghavasimhan Sreenivasan | 2016-04-12 |
| 9312173 | Self-limiting silicide in highly scaled fin technology | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-04-12 |
| 9312143 | Formation of isolation surrounding well implantation | Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2016-04-12 |
| 9312128 | Compound semiconductor integrated circuit and method to fabricate same | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-04-12 |
| 9305846 | Device isolation in FinFET CMOS | Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Steven Bentley, Toshiharu Nagumo, Bruce B. Doris +1 more | 2016-04-05 |
| 9299837 | Integrated circuit having MOSFET with embedded stressor and method to fabricate same | Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-03-29 |
| 9299787 | Forming IV fins and III-V fins on insulator | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-03-29 |
| 9299777 | Gate-all-around nanowire MOSFET and method of formation | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-03-29 |
| 9299719 | CMOS with dual raised source and drain for NMOS and PMOS | Bruce B. Doris, Balasubramanian S. Haran, Ali Khakifirooz | 2016-03-29 |
| 9299703 | CMOS transistors with identical active semiconductor region shapes | Veeraraghavan S. Basker, Ali Khakifirooz | 2016-03-29 |
| 9299618 | Structure and method for advanced bulk fin isolation | Bruce B. Doris, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2016-03-29 |