Issued Patents All Time
Showing 2,251–2,275 of 2,819 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9153498 | Methods of forming semiconductor device with self-aligned contact elements and the resulting devices | Ruilong Xie, Xiuyu Cai, Ali Khakifirooz | 2015-10-06 |
| 9147683 | CMOS transistors including gate spacers of the same thickness | Veeraraghavan S. Basker, Ali Khakifirooz | 2015-09-29 |
| 9142651 | Methods of forming a FinFET semiconductor device so as to reduce punch-through leakage currents and the resulting device | Ruilong Xie, Xiuyu Cai, Ali Khakifirooz | 2015-09-22 |
| 9129938 | Methods of forming germanium-containing and/or III-V nanowire gate-all-around transistors | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2015-09-08 |
| 9117875 | Methods of forming isolated germanium-containing fins for a FinFET semiconductor device | Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Jody A. Fronheiser, Bruce B. Doris, Kern Rim | 2015-08-25 |
| 9105723 | Multi-height FinFETs with coplanar topography | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2015-08-11 |
| 9105577 | MOSFET with work function adjusted metal backgate | Bruce B. Doris, Ali Khakifirooz, Pranita Kulkarni | 2015-08-11 |
| 9105691 | Contact isolation scheme for thin buried oxide substrate devices | Bruce B. Doris, Laurent Grenouillet, Ali Khakifirooz, Yannick Le Tiec, Qing Liu +1 more | 2015-08-11 |
| 9105663 | FinFET with silicon germanium stressor and method of forming | Ali Khakifirooz, Nicolas Loubet, Shogo Mochizuki, Alexander Reznicek, Raghavasimhan Sreenivasan +1 more | 2015-08-11 |
| 9105606 | Self aligned contact with improved robustness | Ali Khakifirooz, Shom Ponoth, Raghavasimhan Sreenivasan | 2015-08-11 |
| 9099493 | Semiconductor device with raised source/drain and replacement metal gate | Junli Wang, Keith Kwong Hon Wong, Chih-Chao Yang | 2015-08-04 |
| 9093326 | Electrically isolated SiGe fin formation by local oxidation | Hong He, Chiahsun Tseng, Yunpeng Yin | 2015-07-28 |
| 9093496 | Process for faciltiating fin isolation schemes | Ajey Poovannummoottil Jacob, Bruce B. Doris, Nicolas Loubet, Prasanna Khare, Ramachandra Divakaruni | 2015-07-28 |
| 9093533 | FinFET structures having silicon germanium and silicon channels | Ali Khakifirooz, Alexander Reznicek, Ghavam G. Shahidi | 2015-07-28 |
| 9093534 | Dielectric filler fins for planar topography in gate level | Ramachandra Divakaruni, Bruce B. Doris, Ali Khakifirooz, Edward J. Nowak, Kern Rim | 2015-07-28 |
| 9093564 | Integrated passive devices for FinFET technologies | Thomas N. Adam, Balasubramanian Pranatharthi Haran, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2015-07-28 |
| 9093478 | Integrated circuit structure with bulk silicon FinFET and methods of forming | Ali Khakifirooz, Qizhi Liu, Edward J. Nowak, Jed H. Rankin | 2015-07-28 |
| 9093260 | Thin hetereostructure channel device | Thomas N. Adam, Hong He, Ali Khakifirooz, Alexander Reznicek | 2015-07-28 |
| 9087741 | CMOS with dual raised source and drain for NMOS and PMOS | Bruce B. Doris, Ali Khakifirooz, Balasubramanian S. Haran | 2015-07-21 |
| 9087928 | High density memory cells using lateral epitaxy | Roger A. Booth, Jr., Joseph Ervin, David M. Fried, Byeong Y. Kim, Chengwen Pei +2 more | 2015-07-21 |
| 9087921 | CMOS with dual raised source and drain for NMOS and PMOS | Bruce B. Doris, Balasubramanian S. Haran, Ali Khakifirooz | 2015-07-21 |
| 9087869 | Bulk semiconductor fins with self-aligned shallow trench isolation structures | Thomas N. Adam, Ali Khakifirooz, Alexander Reznicek | 2015-07-21 |
| 9087859 | FinFET with enhanced embedded stressor | Thomas N. Adam, Ali Khakifirooz, Alexander Reznicek | 2015-07-21 |
| 9087796 | Semiconductor fabrication method using stop layer | Thomas N. Adam, Donald F. Canaperi, Ali Khakifirooz, Alexander Reznicek, Raghavasimhan Sreenivasan +1 more | 2015-07-21 |
| 9087687 | Thin heterostructure channel device | Thomas N. Adam, Hong He, Ali Khakifirooz, Alexander Reznicek | 2015-07-21 |