Issued Patents All Time
Showing 601–625 of 2,819 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10777647 | Fin-type FET with low source or drain contact resistance | Juntao Li, Heng Wu, Peng Xu | 2020-09-15 |
| 10777465 | Integration of vertical-transport transistors and planar transistors | Ruilong Xie, Chun-Chen Yeh, Tenko Yamashita | 2020-09-15 |
| 10777658 | Method and structure of fabricating I-shaped silicon vertical field-effect transistors | Choonghyun Lee, Juntao Li, Peng Xu | 2020-09-15 |
| 10777265 | Enhanced FDSOI physically unclonable function | — | 2020-09-15 |
| 10770388 | Transistor with recessed cross couple for gate contact over active region integration | Ruilong Xie, Veeraraghavan S. Basker, Jia Zeng, Youngtag Woo, Mahender Kumar +1 more | 2020-09-08 |
| 10770566 | Unique gate cap and gate cap spacer structures for devices on integrated circuit products | Julien Frougier, Ruilong Xie, Chanro Park | 2020-09-08 |
| 10770454 | On-chip metal-insulator-metal (MIM) capacitor and methods and systems for forming same | Chanro Park, Ruilong Xie, Juntao Li | 2020-09-08 |
| 10770546 | High density nanotubes and nanotube devices | Choonghyun Lee, Juntao Li, Peng Xu | 2020-09-08 |
| 10770567 | Embedded endpoint Fin reveal | Peng Xu | 2020-09-08 |
| 10770562 | Interlayer dielectric replacement techniques with protection for source/drain contacts | Juntao Li, Andrew M. Greene, Vimal Kamineni, Adra Carr, Chanro Park +1 more | 2020-09-08 |
| 10770589 | Fin field effect transistor including a single diffusion break with a multi-layer dummy gate | — | 2020-09-08 |
| 10763118 | Cyclic selective deposition for tight pitch patterning | Zhenxing Bi, Juntao Li, Dexin Kong | 2020-09-01 |
| 10756178 | Self-limiting and confining epitaxial nucleation | Robin Hsin Kuo Chao, Nicolas Loubet | 2020-08-25 |
| 10756203 | Sub-thermal switching slope vertical field effect transistor with dual-gate feedback loop mechanism | Julien Frougier, Ruilong Xie, Steven R. Bentley, Nicolas Loubet, Pietro Montanini | 2020-08-25 |
| 10756088 | Method and structure of forming strained channels for CMOS device fabrication | Juntao Li, John G. Gaudiello | 2020-08-25 |
| 10756177 | Self-limiting and confining epitaxial nucleation | Robin Hsin Kuo Chao, Nicolas Loubet | 2020-08-25 |
| 10756170 | VFET devices with improved performance | Juntao Li, Choonghyun Lee, Shogo Mochizuki | 2020-08-25 |
| 10756175 | Inner spacer formation and contact resistance reduction in nanosheet transistors | Choonghyun Lee, Juntao Li, Shogo Mochizuki | 2020-08-25 |
| 10755963 | Crossbar reinforced semiconductor fins having reduced wiggling | Chi-Chun Liu, Yann Mignot, Muthumanickam Sankarapandian | 2020-08-25 |
| 10755976 | Field effect device with reduced capacitance and resistance in source/drain contacts at reduced gate pitch | Chi-Chun Liu, Peng Xu | 2020-08-25 |
| 10749011 | Area selective cyclic deposition for VFET top spacer | Zhenxing Bi, Yongan Xu, Yi Song | 2020-08-18 |
| 10749038 | Width adjustment of stacked nanowires | Xin Miao, Ruilong Xie, Tenko Yamashita | 2020-08-18 |
| 10749040 | Integration scheme for non-volatile memory on gate-all-around structure | Dexin Kong, Zhenxing Bi, Zheng Xu | 2020-08-18 |
| 10746691 | Ion-sensitive field effect transistor (ISFET) with enhanced sensitivity | Chanro Park, Ruilong Xie, Juntao Li | 2020-08-18 |
| 10741557 | Hybrid high mobility channel transistors | Xin Miao, Chen Zhang, Wenyu Xu | 2020-08-11 |