Issued Patents All Time
Showing 651–675 of 2,819 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10714684 | Phase change memory with doped silicon germanium alloy-containing electrodes and air gap-containing spacer | — | 2020-07-14 |
| 10714569 | Producing strained nanosheet field effect transistors using a phase change material | Dexin Kong, Juntao Li, Zhenxing Bi | 2020-07-14 |
| 10714570 | Fabrication of perfectly symmetric gate-all-around FET on suspended nanowire using interface interaction | Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2020-07-14 |
| 10714593 | Fabrication of strained vertical p-type field effect transistors by bottom condensation | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2020-07-14 |
| 10714470 | Method and apparatus of forming high voltage varactor and vertical transistor on a substrate | Ruilong Xie, Tenko Yamashita, Chun-Chen Yeh | 2020-07-14 |
| 10707325 | Fin field effect transistor devices with robust gate isolation | — | 2020-07-07 |
| 10707329 | Vertical fin field effect transistor device with reduced gate variation and reduced capacitance | Juntao Li, Choonghyun Lee, Shogo Mochizuki | 2020-07-07 |
| 10707208 | Fabrication of fin field effect transistors utilizing different fin channel materials while maintaining consistent fin widths | Juntao Li, Peng Xu | 2020-07-07 |
| 10707332 | FinFET with epitaxial source and drain regions and dielectric isolated channel region | Ramachandra Divakaruni, Ali Khakifirooz, Alexander Reznicek, Soon-Cheon Seo | 2020-07-07 |
| 10707127 | Field effect transistor devices with self-aligned source/drain contacts and gate contacts positioned over active transistors | Juntao Li, Zhenxing Bi, Dexin Kong | 2020-07-07 |
| 10707128 | Fabrication of self-aligned gate contacts and source/drain contacts directly above gate electrodes and source/drains | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2020-07-07 |
| 10707083 | High aspect ratio gates | Sivananda K. Kanakasabapathy, Peng Xu | 2020-07-07 |
| 10707115 | Dry fin reveal without fin damage | Peng Xu | 2020-07-07 |
| 10699962 | FinFET devices | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2020-06-30 |
| 10700058 | Compound semiconductor devices having buried resistors formed in buffer layer | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2020-06-30 |
| 10699959 | Integrating metal-insulator-metal capacitors with fabrication of vertical field effect transistors | Xuefeng Liu, Heng Wu, Peng Xu | 2020-06-30 |
| 10700062 | Vertical transport field-effect transistors with uniform threshold voltage | Choonghyun Lee, Juntao Li, Shogo Mochizuki | 2020-06-30 |
| 10692859 | Large area diode co-integrated with vertical field-effect-transistors | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2020-06-23 |
| 10692989 | Replacement metal gate structures | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2020-06-23 |
| 10693007 | Wrapped contacts with enhanced area | Zuoguang Liu, Heng Wu, Peng Xu | 2020-06-23 |
| 10689245 | Vertically stacked nanofluidic channel array | Juntao Li, Choonghyun Lee, Peng Xu | 2020-06-23 |
| 10692772 | Integrating metal-insulator-metal capacitors with fabrication of vertical field effect transistors | Xuefeng Liu, Heng Wu, Peng Xu | 2020-06-23 |
| 10692776 | Formation of VTFET fin and vertical fin profile | Eric R. Miller, Marc A. Bergendahl, Yann Mignot | 2020-06-23 |
| 10686057 | Vertical transport FET devices having a sacrificial doped layer | Choonghyun Lee, Juntao Li, Shogo Mochizuki | 2020-06-16 |
| 10686048 | Vertical fin with a gate structure having a modified gate geometry | Peng Xu | 2020-06-16 |