CR

Carl Radens

IBM: 386 patents #43 of 70,183Top 1%
SS Stmicroelectronics Sa: 28 patents #40 of 1,676Top 3%
Infineon Technologies Ag: 27 patents #663 of 7,486Top 9%
Globalfoundries: 16 patents #218 of 4,424Top 5%
SA Siemens Aktiengesellschaft: 3 patents #4,667 of 22,248Top 25%
TE Tessera: 2 patents #162 of 271Top 60%
SM Siemens Microelectronics: 2 patents #2 of 40Top 5%
AS Adeia Semiconductor Solutions: 1 patents #22 of 57Top 40%
📍 Lagrangeville, NY: #1 of 200 inventorsTop 1%
🗺 New York: #32 of 115,490 inventorsTop 1%
Overall (All Time): #603 of 4,157,543Top 1%
408
Patents All Time

Issued Patents All Time

Showing 351–375 of 408 patents

Patent #TitleCo-InventorsDate
6355531 Method for fabricating semiconductor devices with different properties using maskless process Jack A. Mandelman, Louis L. Hsu, William R. Tonti, Li-Kong Wang 2002-03-12
6352892 Method of making DRAM trench capacitor Rajarao Jammy, Jack A. Mandelman 2002-03-05
6348374 Process for 4F2 STC cell having vertical MOSFET and buried-bitline conductor structure Satish D. Athavale, Gary B. Bronner, Ramachandra Divakaruni, Ulrike Gruening, Jack A. Mandelman 2002-02-19
6344389 Self-aligned damascene interconnect Gary B. Bronner, Jeffrey P. Gambino 2002-02-05
6339241 Structure and process for 6F2 trench capacitor DRAM cell with vertical MOSFET and 3F bitline pitch Jack A. Mandelman, Ramachandra Divakaruni, Ulrike Gruening 2002-01-15
6339239 DRAM cell layout for node capacitance enhancement Johann Alsmeier 2002-01-15
6319788 Semiconductor structure and manufacturing methods Ulrike Gruening, Martin Schrems 2001-11-20
6320215 Crystal-axis-aligned vertical side wall device Gary B. Bronner, Ulrike Gruening, Jack A. Mandelman 2001-11-20
6309924 Method of forming self-limiting polysilicon LOCOS for DRAM cell Ramachandra Divakaruni, Jack A. Mandelman, Irene McStay, Larry Nesbit, Helmut Tews 2001-10-30
6297086 Application of excimer laser anneal to DRAM processing Suryanarayan G. Hegde, Kam-Leung Lee, Jack A. Mandelman 2001-10-02
6288422 Structure and process for fabricating a 6F2 DRAM cell having vertical MOSFET and large trench capacitance Jack A. Mandelman, Rama Divakaruni 2001-09-11
6284593 Method for shallow trench isolated, contacted well, vertical MOSFET DRAM Jack A. Mandelman, Ramachandra Divakaruni 2001-09-04
6282116 Dynamic random access memory Gerhard Kunkel, Shahid Butt 2001-08-28
6274467 Dual work function gate conductors with self-aligned insulating cap Jeffrey P. Gambino, Louis L. Hsu, Jack A. Mandelman, William R. Tonti 2001-08-14
6271142 Process for manufacture of trench DRAM capacitor buried plates Ulrike Gruening, Dirk Tobben 2001-08-07
6268638 Metal wire fuse structure with cavity Axel Brintzinger, Edward W. Kiewra, Chandrasekhar Narayan 2001-07-31
6265308 Slotted damascene lines for low resistive wiring lines for integrated circuit Gary B. Bronner, Greg Costrini, Rainer Florian Schnabel 2001-07-24
6265279 Method for fabricating a trench capacitor Jack A. Mandelman, Joachim Hoepfner 2001-07-24
6261914 Process for improving local uniformity of chemical mechanical polishing using a self-aligned polish rate enhancement layer Ramachandra Divakaruni, Jeffrey P. Gambino, Jeremy K. Stephens 2001-07-17
6261894 Method for forming dual workfunction high-performance support MOSFETs in EDRAM arrays Jack A. Mandelman, Ramachandra Divakaruni 2001-07-17
6258689 Low resistance fill for deep trench capacitor Gary B. Bronner, Jeffrey P. Gambino, Jack A. Mandelman, Rick L. Mohler, William R. Tonti 2001-07-10
6259129 Strap with intrinsically conductive barrier Jeffrey P. Gambino, Rajarao Jammy, Jack A. Mandelman 2001-07-10
6259135 MOS transistors structure for reducing the size of pitch limited circuits Louis L. Hsu 2001-07-10
6255683 Dynamic random access memory Ulrike Gruening, John K. DeBrosse, Jack A. Mandelman 2001-07-03
6255158 Process of manufacturing a vertical dynamic random access memory device Toshiharu Furukawa, Ulrike Gruening, David V. Horak, Jack A. Mandelman, Thomas Rupp 2001-07-03