BA

Brent A. Anderson

Globalfoundries: 38 patents #63 of 4,424Top 2%
Samsung: 4 patents #25,854 of 75,807Top 35%
ET Elpis Technologies: 2 patents #16 of 121Top 15%
TC Toshiba America Electronic Components: 1 patents #23 of 77Top 30%
📍 Jericho, VT: #1 of 170 inventorsTop 1%
🗺 Vermont: #2 of 4,968 inventorsTop 1%
Overall (All Time): #321 of 4,157,543Top 1%
542
Patents All Time

Issued Patents All Time

Showing 26–50 of 542 patents

Patent #TitleCo-InventorsDate
12040250 Heat pipe for vertically stacked field effect transistors Terence B. Hook, Anthony I. Chou 2024-07-16
12034005 Self-aligned metal gate with poly silicide for vertical transport field-effect transistors Ruqiang Bao, Dechao Guo, Vijay Narayanan 2024-07-09
12001772 Ultra-short-height standard cell architecture Albert M. Chu, Junli Wang 2024-06-04
12002874 Buried power rail contact Junli Wang, Ruilong Xie, Chen Zhang, Heng Wu 2024-06-04
11990410 Top via interconnect having a line with a reduced bottom dimension Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Christopher J. Penny, Kisik Choi, Robert R. Robison 2024-05-21
11961759 Interconnects having spacers for improved top via critical dimension and overlay tolerance Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Christopher J. Penny, Kisik Choi, Robert R. Robison 2024-04-16
11915966 Backside power rail integration Ruilong Xie, Takeshi Nogami, Roy R. Yu, Balasubramanian Pranatharthiharan, Albert M. Young +1 more 2024-02-27
11901440 Sacrificial fin for self-aligned contact rail formation Yann Mignot, Christopher J. Waskiewicz, Su Chen Fan, Junli Wang 2024-02-13
11894265 Top via with damascene line and via Lawrence A. Clevenger, Kisik Choi, Nicholas Anthony Lanzillo, Christopher J. Penny, Robert R. Robison 2024-02-06
11869808 Top via process with damascene metal Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Christopher J. Penny, Kisik Choi, Robert R. Robison 2024-01-09
11855191 Vertical FET with contact to gate above active fin Junli Wang, Indira Seshadri, Chen Zhang, Ruilong Xie, Joshua M. Rubin +1 more 2023-12-26
11842961 Advanced metal interconnects with a replacement metal Lawrence A. Clevenger, Kisik Choi, Nicholas Anthony Lanzillo 2023-12-12
11830774 Buried contact through fin-to-fin space for vertical transport field effect transistor Junli Wang 2023-11-28
11823998 Top via with next level line selective growth Lawrence A. Clevenger, Christopher J. Penny, Nicholas Anthony Lanzillo, Kisik Choi, Robert R. Robison 2023-11-21
11804406 Top via cut fill process for line extension reduction Christopher J. Penny, Lawrence A. Clevenger, Kisik Choi, Nicholas Anthony Lanzillo, Robert R. Robison 2023-10-31
11791258 Conductive lines with subtractive cuts Lawrence A. Clevenger, Kisik Choi, Nicholas Anthony Lanzillo, Christopher J. Penny, Robert R. Robison 2023-10-17
11764298 VTFET with buried power rails Chen Zhang, Ruilong Xie, Heng Wu, Junli Wang 2023-09-19
11710666 Dummy fin template to form a self-aligned metal contact for output of vertical transport field effect transistor Junli Wang, Albert M. Young 2023-07-25
11688775 Method of forming first and second contacts self-aligned top source/drain region of a vertical field-effect transistor Juntao Li, Kangguo Cheng 2023-06-27
11670542 Stepped top via for via resistance reduction Lawrence A. Clevenger, Christopher J. Penny, Kisik Choi, Nicholas Anthony Lanzillo, Robert R. Robison 2023-06-06
11658116 Interconnects on multiple sides of a semiconductor structure Junli Wang, Albert M. Chu, Dechao Guo 2023-05-23
11600565 Top via stack Lawrence A. Clevenger, Christopher J. Penny, Kisik Choi, Nicholas Anthony Lanzillo, Robert R. Robison 2023-03-07
11563003 Fin top hard mask formation after wafer flipping process Chen Zhang, Tenko Yamashita, Joshua M. Rubin 2023-01-24
11538939 Controlled bottom junctions Ruilong Xie, Juntao Li, Kangguo Cheng 2022-12-27
11437317 Single-mask alternating line deposition Lawrence A. Clevenger, Christopher J. Penny, Kisik Choi, Nicholas Anthony Lanzillo, Robert R. Robison 2022-09-06