Issued Patents All Time
Showing 101–125 of 213 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8975141 | Dual work function FinFET structures and methods for fabricating the same | Bin Yang, Francis M. Tambwe | 2015-03-10 |
| 8969932 | Methods of forming a finfet semiconductor device with undoped fins | Akshey Sehgal, Seung Kim, Teck Jung Tang, Francis M. Tambwe | 2015-03-03 |
| 8962421 | Methods for fabricating integrated circuits including semiconductive resistor structures in a FinFET architecture | Gopal Srinivasan, Dinesh Somasekhar, Ali Keshavarzi, Subi Kengeri | 2015-02-24 |
| 8962420 | Semiconductor device comprising a buried poly resistor | Andreas Kurz, Roman Boschke, James F. Buller | 2015-02-24 |
| 8941187 | Strain engineering in three-dimensional transistors based on strained isolation material | Tim Baldauf, Tom Herrmann, Stefan Flachowsky, Ralf Illgen | 2015-01-27 |
| 8936986 | Methods of forming finfet devices with a shared gate structure | Dae Geun Yang | 2015-01-20 |
| 8936979 | Semiconductor devices having improved gate height uniformity and methods for fabricating same | Ruilong Xie, Xiuyu Cai, Robert J. Miller | 2015-01-20 |
| 8927407 | Method of forming self-aligned contacts for a semiconductor device | Peter Baars, Erik Geiss, Martin Mazur | 2015-01-06 |
| 8916928 | Threshold voltage adjustment in a fin transistor by corner implantation | Tim Baldauf, Tom Herrmann, Stefan Flachowsky, Ralf Illgen | 2014-12-23 |
| 8906811 | Shallow pn junction formed by in situ doping during selective growth of an embedded semiconductor alloy by a cyclic growth/etch deposition process | Thorsten Kammler, Ina Ostermay | 2014-12-09 |
| 8846491 | Forming a diffusion break during a RMG process | Daniel T. Pham, Zhenyu Hu, Nicholas V. LiCausi | 2014-09-30 |
| 8835245 | Semiconductor device comprising self-aligned contact elements | Peter Baars, Till Schloesser, Frank Jakubowski, Richard J. Carter, Matthias Schaller | 2014-09-16 |
| 8835233 | FinFET structure with multiple workfunctions and method for fabricating the same | Akshey Sehgal, Bamidele S. Allimi | 2014-09-16 |
| 8753940 | Methods of forming isolation structures and fins on a FinFET semiconductor device | Dae Geun Yang | 2014-06-17 |
| 8742510 | Semiconductor devices with replacement gate structures having conductive contacts positioned therebetween | Peter Baars, Richard J. Carter | 2014-06-03 |
| 8742513 | Semiconductor device comprising metal gates and a silicon containing resistor formed on an isolation structure | Andrew Waite | 2014-06-03 |
| 8722498 | Self-aligned fin transistor formed on a bulk substrate by late fin etch | Thilo Scheiper | 2014-05-13 |
| 8722500 | Methods for fabricating integrated circuits having gate to active and gate to gate interconnects | Thilo Scheiper, Stefan Flachowsky | 2014-05-13 |
| 8716120 | High-k metal gate electrode structures formed by reducing a gate fill aspect ratio in replacement gate technology | Klaus Hempel, Martin Mazur | 2014-05-06 |
| 8697584 | Enhanced transistor performance of N-channel transistors by using an additional layer above a dual stress liner in a semiconductor device | Ralf Richter, Roman Boschke | 2014-04-15 |
| 8679924 | Self-aligned multiple gate transistor formed on a bulk substrate | Vivien Schroeder, Thilo Scheiper, Thomas Werner, Johannes Groschopf | 2014-03-25 |
| 8673713 | Method for forming a transistor with recessed drain and source areas and non-conformal metal silicide regions | Jan Hoentschel, Uwe Griebenow | 2014-03-18 |
| 8673759 | Dry etch polysilicon removal for replacement gates | Chris M. Prindle, Klaus Hempel | 2014-03-18 |
| 8664056 | Transistor with embedded strain-inducing material formed in diamond-shaped cavities based on a pre-amorphization | Frank Wirbeleit | 2014-03-04 |
| 8664103 | Metal gate stack formation for replacement gate technology | Klaus Hempel, Robert Binder, Joachim Metzger | 2014-03-04 |