Issued Patents 2021
Showing 1–25 of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11205707 | Optimizing gate profile for performance and gate fill | Nadia M. Rahhal-Orabi, Tahir Ghani, Willy Rachmady, Matthew V. Metz, Jack T. Kavalieros +2 more | 2021-12-21 |
| 11195919 | Method of fabricating a semiconductor device with strained SiGe fins and a Si cladding layer | Stephen M. Cea, Roza Kotlyar, Harold W. Kennel, Glenn A. Glass, Kelin J. Kuhn +1 more | 2021-12-07 |
| 11189730 | Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium nMOS transistors | Glenn A. Glass, Karthik Jambunathan, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more | 2021-11-30 |
| 11177255 | Transistor structures having multiple threshold voltage channel materials | Sean T. Ma, Willy Rachmady, Gilbert Dewey, Matthew V. Metz, Harold W. Kennel +3 more | 2021-11-16 |
| 11171057 | Semiconductor fin design to mitigate fin collapse | Glenn A. Glass, Chytra Pawashe, Daniel Pantuso, Tahir Ghani | 2021-11-09 |
| 11171207 | Transistor with isolation below source and drain | Willy Rachmady, Cheng-Ying Huang, Matthew V. Metz, Nicholas G. Minutillo, Sean T. Ma +3 more | 2021-11-09 |
| 11171058 | Self-aligned 3-D epitaxial structures for MOS device fabrication | Glenn A. Glass, Daniel B. Aubertine, Gaurav Thareja, Tahir Ghani | 2021-11-09 |
| 11164785 | Three-dimensional integrated circuits (3DICs) including upper-level transistors with epitaxial source and drain material | Ashish Agrawal, Gilbert Dewey, Cheng-Ying Huang, Willy Rachmady, Ryan Keech +1 more | 2021-11-02 |
| 11164747 | Group III-V semiconductor devices having asymmetric source and drain structures | Sean T. Ma, Gilbert Dewey, Willy Rachmady, Harold W. Kennel, Cheng-Ying Huang +3 more | 2021-11-02 |
| 11152361 | Techniques for achieving multiple transistor fin dimensions on a single die | Glenn A. Glass | 2021-10-19 |
| 11121030 | Transistors employing carbon-based etch stop layer for preserving source/drain material during contact trench etch | Glenn A. Glass, Karthik Jambunathan, Benjamin Chu-Kung, Seung Hoon Sung, Jack T. Kavalieros +1 more | 2021-09-14 |
| 11107920 | Methods of forming dislocation enhanced strain in NMOS structures | Michael Jackson, Glenn A. Glass, Saurabh Morarka, Chandra S. Mohapatra | 2021-08-31 |
| 11107890 | FINFET transistor having a doped subfin structure to reduce channel to substrate leakage | Gilbert Dewey, Matthew V. Metz, Willy Rachmady, Chandra S. Mohapatra, Tahir Ghani +2 more | 2021-08-31 |
| 11101350 | Integrated circuit with germanium-rich channel transistors including one or more dopant diffusion barrier elements | Glenn A. Glass, Karthik Jambunathan, Benjamin Chu-Kung, Seung Hoon Sung, Jack T. Kavalieros +2 more | 2021-08-24 |
| 11101356 | Doped insulator cap to reduce source/drain diffusion for germanium NMOS transistors | Glenn A. Glass, Karthik Jambunathan, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more | 2021-08-24 |
| 11101268 | Transistors employing non-selective deposition of source/drain material | Karthik Jambunathan, Scott Maddox, Ritesh Jhaveri, Pratik A. Patel, Szuya S. Liao +1 more | 2021-08-24 |
| 11094785 | Deuterium-based passivation of non-planar transistor interfaces | Prashant Majhi, Glenn A. Glass, Tahir Ghani, Aravind S. Killampalli, Mark R. Brazier +1 more | 2021-08-17 |
| 11081570 | Transistors with lattice matched gate structure | Karthik Jambunathan, Glenn A. Glass, Jack T. Kavalieros, Seung Hoon Sung, Benjamin Chu-Kung +1 more | 2021-08-03 |
| 11069795 | Transistors with channel and sub-channel regions with distinct compositions and dimensions | Karthik Jambunathan, Glenn A. Glass, Jun Sung Kang, Bruce Beattie, Anupama Bowonder +3 more | 2021-07-20 |
| 11056592 | Silicon substrate modification to enable formation of thin, relaxed, germanium-based layer | Karthik Jambunathan, Cory Bomberger, Glenn A. Glass, Ju H. Nam, Tahir Ghani | 2021-07-06 |
| 11049773 | Art trench spacers to enable fin release for non-lattice matched channels | Gilbert Dewey, Matthew V. Metz, Sean T. Ma, Cheng-Ying Huang, Tahir Ghani +4 more | 2021-06-29 |
| 11024737 | Etching fin core to provide fin doubling | Chandra S. Mohapatra, Glenn A. Glass, Karthik Jambunathan | 2021-06-01 |
| 11024713 | Gradient doping to lower leakage in low band gap material devices | Seung Hoon Sung, Dipanjan Basu, Glenn A. Glass, Harold W. Kennel, Ashish Agrawal +3 more | 2021-06-01 |
| 11011620 | Techniques for increasing channel region tensile strain in n-MOS devices | Rishabh Mehandru, Cory E. Weber, Karthik Jambunathan, Glenn A. Glass, Jiong Zhang +2 more | 2021-05-18 |
| 11004954 | Epitaxial buffer to reduce sub-channel leakage in MOS transistors | Karthik Jambunathan, Glenn A. Glass, Jack T. Kavalieros, Seung Hoon Sung, Benjamin Chu-Kung +1 more | 2021-05-11 |