Issued Patents 2019
Showing 226–250 of 354 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10263075 | Nanosheet CMOS transistors | Zhenxing Bi, Juntao Li, Peng Xu | 2019-04-16 |
| 10263014 | Fin-type field-effect transistor | — | 2019-04-16 |
| 10262991 | Distributed decoupling capacitor | Ali Khakifirooz, Darsen D. Lu, Ghavam G. Shahidi | 2019-04-16 |
| 10262905 | Simplified multi-threshold voltage scheme for fully depleted SOI MOSFETs | Bruce B. Doris, Ali Khakifirooz, Qing Liu, Nicolas Loubet, Scott Luning | 2019-04-16 |
| 10262901 | Fabrication of a vertical fin field effect transistor with reduced dimensional variations | — | 2019-04-16 |
| 10262900 | Wimpy device by selective laser annealing | Nicolas Loubet, Xin Miao, Alexander Reznicek | 2019-04-16 |
| 10262890 | Method of forming silicon hardmask | Peng Xu | 2019-04-16 |
| 10256154 | Uniform shallow trench isolation | Junli Wang, Peng Xu, Chen Zhang | 2019-04-09 |
| 10256328 | Dummy dielectric fins for finFETs with silicon and silicon germanium channels | Xin Miao, Wenyu Xu, Chen Zhang | 2019-04-09 |
| 10256326 | Forming stacked nanowire semiconductor device | Marc A. Bergendahl, Fee Li Lie, Eric R. Miller, Jeffrey C. Shearer, John R. Sporre +1 more | 2019-04-09 |
| 10256321 | Semiconductor device including enhanced low-k spacer | Zuoguang Liu, Chun Wing Yeung | 2019-04-09 |
| 10256316 | Steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Nicolas Loubet, Ruilong Xie, Daniel Chanemougame, Ali Razavieh | 2019-04-09 |
| 10256302 | Vertical transistor with air-gap spacer | Tak H. Ning | 2019-04-09 |
| 10256231 | Forming vertical transistors and metal-insulator-metal capacitors on the same chip | Ruilong Xie, Tenko Yamashita, Chun-Chen Yeh | 2019-04-09 |
| 10256230 | Co-fabrication of vertical diodes and fin field effect transistors on the same substrate | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2019-04-09 |
| 10254244 | Biosensor having a sensing gate dielectric and a back gate dielectric | — | 2019-04-09 |
| 10249536 | Semiconductor fins for FinFET devices and sidewall image transfer (SIT) processes for manufacturing the same | Veeraraghavan S. Basker, Theodorus E. Standaert | 2019-04-02 |
| 10249762 | Vertically aligned nanowire channels with source/drain interconnects for nanosheet transistors | Marc A. Bergendahl, Eric R. Miller, John R. Sporre, Sean Teehan | 2019-04-02 |
| 10249755 | Transistor with asymmetric source/drain overlap | Peng Xu, Heng Wu, Zhenxing Bi | 2019-04-02 |
| 10249738 | Nanosheet channel-to-source and drain isolation | Marc A. Bergendahl, Fee Li Lie, Eric R. Miller, John R. Sporre, Sean Teehan | 2019-04-02 |
| 10249731 | Vertical FET with sharp junctions | Juntao Li, Peng Xu, Heng Wu | 2019-04-02 |
| 10249709 | Stacked nanosheet field effect transistor device with substrate isolation | Juntao Li, Geng Wang, Qintao Zhang | 2019-04-02 |
| 10249541 | Forming a hybrid channel nanosheet semiconductor structure | Peng Xu | 2019-04-02 |
| 10249539 | Nanosheet transistors having different gate dielectric thicknesses on the same chip | Juntao Li, Geng Wang, Qintao Zhang | 2019-04-02 |
| 10249538 | Method of forming vertical field effect transistors with different gate lengths and a resulting structure | Yi Qi, Hsien-Ching Lo, Jianwei Peng, Wei Hong, Yanping Shen +5 more | 2019-04-02 |