MB

Marc A. Bergendahl

IBM: 16 patents #220 of 11,143Top 2%
📍 Troy, NY: #2 of 70 inventorsTop 3%
🗺 New York: #140 of 13,137 inventorsTop 2%
Overall (2019): #3,229 of 560,194Top 1%
16
Patents 2019

Issued Patents 2019

Showing 1–16 of 16 patents

Patent #TitleCo-InventorsDate
10475878 BEOL capacitor through airgap metallization James J. Demarest, Christopher J. Penny, Christopher J. Waskiewicz 2019-11-12
10453793 BEOL vertical fuse formed over air gap James J. Demarest, Christopher J. Penny, Christopher J. Waskiewicz 2019-10-22
10438972 Sub-fin removal for SOI like isolation with uniform active fin height Kangguo Cheng, Gauri Karve, Fee Li Lie, Eric R. Miller, John R. Sporre +1 more 2019-10-08
10424663 Super long channel device within VFET architecture Kangguo Cheng, Gauri Karve, Fee Li Lie, Eric R. Miller, John R. Sporre +1 more 2019-09-24
10396181 Forming stacked nanowire semiconductor device Kangguo Cheng, Fee Li Lie, Eric R. Miller, Jeffrey C. Shearer, John R. Sporre +1 more 2019-08-27
10388525 Multi-angled deposition and masking for custom spacer trim and selected spacer removal Sean D. Burns, Lawrence A. Clevenger, Christopher J. Penny, Michael Rizzolo 2019-08-20
10381437 Semiconductor device and method of forming the semiconductor device Gauri Karve, Fee Li Lie, Eric R. Miller, Robert R. Robison, John R. Sporre +1 more 2019-08-13
10361079 Multi-angled deposition and masking for custom spacer trim and selected spacer removal Sean D. Burns, Lawrence A. Clevenger, Christopher J. Penny, Michael Rizzolo 2019-07-23
10326017 Formation of a bottom source-drain for vertical field-effect transistors Kangguo Cheng, Fee Li Lie, Shogo Mochizuki, Junli Wang 2019-06-18
10269931 Vertical transport field effect transistor with precise gate length definition Kangguo Cheng, Fee Li Lie, Eric R. Miller, John R. Sporre, Sean Teehan 2019-04-23
10256326 Forming stacked nanowire semiconductor device Kangguo Cheng, Fee Li Lie, Eric R. Miller, Jeffrey C. Shearer, John R. Sporre +1 more 2019-04-09
10249762 Vertically aligned nanowire channels with source/drain interconnects for nanosheet transistors Kangguo Cheng, Eric R. Miller, John R. Sporre, Sean Teehan 2019-04-02
10249738 Nanosheet channel-to-source and drain isolation Kangguo Cheng, Fee Li Lie, Eric R. Miller, John R. Sporre, Sean Teehan 2019-04-02
10217634 Fin patterns with varying spacing without fin cut Kangguo Cheng, John R. Sporre, Sean Teehan 2019-02-26
10211055 Fin patterns with varying spacing without fin cut Kangguo Cheng, John R. Sporre, Sean Teehan 2019-02-19
10199503 Under-channel gate transistors Kangguo Cheng, Gauri Karve, Fee Li Lie, Eric R. Miller, John R. Sporre +1 more 2019-02-05