| 10516064 |
Multiple width nanosheet devices |
Kangguo Cheng, Lawrence A. Clevenger, Carl Radens, John H. Zhang |
2019-12-24 |
$10,655,000 |
| 10515859 |
Extra gate device for nanosheet |
Bruce B. Doris, Terence B. Hook |
2019-12-24 |
$10,655,000 |
| 10504889 |
Integrating a junction field effect transistor into a vertical field effect transistor |
Brent A. Anderson, Huiming Bu, Terence B. Hook, Xuefeng Liu |
2019-12-10 |
$5,388,000 |
| 10497629 |
Self-aligned punch through stopper liner for bulk FinFET |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2019-12-03 |
$6,493,000 |
| 10475904 |
Methods of forming merged source/drain regions on integrated circuit products |
Hiroaki Niimi, Steven Bentley, Romain Lallement, Brent A. Anderson, Muthumanickam Sankarapandian |
2019-11-12 |
$44,011,000 |
| 10468491 |
Low resistance contact for transistors |
Lawrence A. Clevenger, Kirk D. Peterson, Baozhen Li, Terry A. Spooner, John E. Sheets, II |
2019-11-05 |
$4,028,000 |
| 10460990 |
Semiconductor via structure with lower electrical resistance |
Lawrence A. Clevenger, Baozhen Li, Kirk D. Peterson, Terry A. Spooner |
2019-10-29 |
$4,364,000 |
| 10453934 |
Vertical transport FET devices having air gap top spacer |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2019-10-22 |
$3,154,000 |
| 10446670 |
Integration of strained silicon germanium PFET device and silicon NFET device for FINFET structures |
Bruce B. Doris, Hong He, Nicolas Loubet |
2019-10-15 |
$4,653,000 |
| 10438850 |
Semiconductor device with local connection |
Kangguo Cheng, Lawrence A. Clevenger, Carl Radens, John H. Zhang |
2019-10-08 |
$4,743,000 |
| 10431495 |
Semiconductor device with local connection |
Kangguo Cheng, Lawrence A. Clevenger, Carl Radens, John H. Zhang |
2019-10-01 |
$3,685,000 |
| 10418462 |
Silicidation of bottom source/drain sheet using pinch-off sacrificial spacer process |
Brent A. Anderson, Huiming Bu, Terence B. Hook, Fee Li Lie |
2019-09-17 |
$3,647,000 |
| 10418280 |
Fabrication of self-aligned gate contacts and source/drain contacts directly above gate electrodes and source/drains |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2019-09-17 |
$3,647,000 |
| 10411128 |
Strained fin channel devices |
Kangguo Cheng, Lawrence A. Clevenger, Carl Radens, John H. Zhang |
2019-09-10 |
$4,978,000 |
| 10403740 |
Gate planarity for FinFET using dummy polish stop |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2019-09-03 |
$15,611,000 |
| 10396069 |
Approach to fabrication of an on-chip resistor with a field effect transistor |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2019-08-27 |
$1,335,000 |
| 10396185 |
Integration of strained silicon germanium PFET device and silicon NFET device for finFET structures |
Bruce B. Doris, Hong He, Nicolas Loubet |
2019-08-27 |
$1,335,000 |
| 10388718 |
Metal-insulator-metal capacitor structure |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2019-08-20 |
$1,949,000 |
| 10388576 |
Semiconductor device including dual trench epitaxial dual-liner contacts |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2019-08-20 |
$1,949,000 |
| 10373905 |
Integrating metal-insulator-metal capacitors with air gap process flow |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2019-08-06 |
$1,880,000 |
| 10374035 |
Bulk nanosheet with dielectric isolation |
Kangguo Cheng, Bruce B. Doris |
2019-08-06 |
$1,880,000 |
| 10361265 |
Precision BEOL resistors |
Baozhen Li, Kirk D. Peterson, John E. Sheets, II, Lawrence A. Clevenger, Chih-Chao Yang |
2019-07-23 |
$2,519,000 |
| 10347759 |
Vertical FET structure |
Brent A. Anderson, Huiming Bu, Fee Li Lie, Edward J. Nowak |
2019-07-09 |
$2,201,000 |
| 10340330 |
Precision BEOL resistors |
Baozhen Li, Kirk D. Peterson, John E. Sheets, II, Lawrence A. Clevenger, Chih-Chao Yang |
2019-07-02 |
$3,331,000 |
| 10340189 |
Source and drain epitaxial semiconductor material integration for high voltage semiconductor devices |
Balasubramanian Pranatharthiharan, Ruilong Xie |
2019-07-02 |
$3,331,000 |
