Issued Patents 2019
Showing 25 most recent of 73 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10516064 | Multiple width nanosheet devices | Kangguo Cheng, Lawrence A. Clevenger, Carl Radens, John H. Zhang | 2019-12-24 |
| 10515859 | Extra gate device for nanosheet | Bruce B. Doris, Terence B. Hook | 2019-12-24 |
| 10504889 | Integrating a junction field effect transistor into a vertical field effect transistor | Brent A. Anderson, Huiming Bu, Terence B. Hook, Xuefeng Liu | 2019-12-10 |
| 10497629 | Self-aligned punch through stopper liner for bulk FinFET | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2019-12-03 |
| 10475904 | Methods of forming merged source/drain regions on integrated circuit products | Hiroaki Niimi, Steven Bentley, Romain Lallement, Brent A. Anderson, Muthumanickam Sankarapandian | 2019-11-12 |
| 10468491 | Low resistance contact for transistors | Lawrence A. Clevenger, Kirk D. Peterson, Baozhen Li, Terry A. Spooner, John E. Sheets, II | 2019-11-05 |
| 10460990 | Semiconductor via structure with lower electrical resistance | Lawrence A. Clevenger, Baozhen Li, Kirk D. Peterson, Terry A. Spooner | 2019-10-29 |
| 10453934 | Vertical transport FET devices having air gap top spacer | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2019-10-22 |
| 10446670 | Integration of strained silicon germanium PFET device and silicon NFET device for FINFET structures | Bruce B. Doris, Hong He, Nicolas Loubet | 2019-10-15 |
| 10438850 | Semiconductor device with local connection | Kangguo Cheng, Lawrence A. Clevenger, Carl Radens, John H. Zhang | 2019-10-08 |
| 10431495 | Semiconductor device with local connection | Kangguo Cheng, Lawrence A. Clevenger, Carl Radens, John H. Zhang | 2019-10-01 |
| 10418462 | Silicidation of bottom source/drain sheet using pinch-off sacrificial spacer process | Brent A. Anderson, Huiming Bu, Terence B. Hook, Fee Li Lie | 2019-09-17 |
| 10418280 | Fabrication of self-aligned gate contacts and source/drain contacts directly above gate electrodes and source/drains | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2019-09-17 |
| 10411128 | Strained fin channel devices | Kangguo Cheng, Lawrence A. Clevenger, Carl Radens, John H. Zhang | 2019-09-10 |
| 10403740 | Gate planarity for FinFET using dummy polish stop | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2019-09-03 |
| 10396069 | Approach to fabrication of an on-chip resistor with a field effect transistor | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2019-08-27 |
| 10396185 | Integration of strained silicon germanium PFET device and silicon NFET device for finFET structures | Bruce B. Doris, Hong He, Nicolas Loubet | 2019-08-27 |
| 10388718 | Metal-insulator-metal capacitor structure | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2019-08-20 |
| 10388576 | Semiconductor device including dual trench epitaxial dual-liner contacts | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2019-08-20 |
| 10373905 | Integrating metal-insulator-metal capacitors with air gap process flow | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2019-08-06 |
| 10374035 | Bulk nanosheet with dielectric isolation | Kangguo Cheng, Bruce B. Doris | 2019-08-06 |
| 10361265 | Precision BEOL resistors | Baozhen Li, Kirk D. Peterson, John E. Sheets, II, Lawrence A. Clevenger, Chih-Chao Yang | 2019-07-23 |
| 10347759 | Vertical FET structure | Brent A. Anderson, Huiming Bu, Fee Li Lie, Edward J. Nowak | 2019-07-09 |
| 10340330 | Precision BEOL resistors | Baozhen Li, Kirk D. Peterson, John E. Sheets, II, Lawrence A. Clevenger, Chih-Chao Yang | 2019-07-02 |
| 10340189 | Source and drain epitaxial semiconductor material integration for high voltage semiconductor devices | Balasubramanian Pranatharthiharan, Ruilong Xie | 2019-07-02 |