Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Integrating a junction field effect transistor into a vertical field effect transistor

Integrating a junction field effect transistor into a vertical field effect transistor

US Patent 10504889 · Granted Dec 10, 2019

Estimated economic value: $5,388,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Backside self aligned skip via2025
Stacked field effect transistor2025
Different dimensions across active region for stronger via to backside power rai2025
Early backside first power delivery network2025
Source/drain contact at tight cell boundary2025
Subtractive source drain contact for stacked devices2025
Stacked FET with extremely small cell height2025
Interconnect structures with vias having vertical and horizontal sections2025
Wrap around metal via structure2025
Cross bar vertical FETs2025
Vertical transport field effect transistor (VTFET) with backside wraparound cont2025
Asymmetric gate extension in stacked FET2025