Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Subtractive source drain contact for stacked devices

Subtractive source drain contact for stacked devices

US Patent 12484265 · Granted Nov 25, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

CFET with independent gate control and low parasitic capacitance2025
Transistors with backside source/drain contact and spacer2025
Reduced capacitance between power via bar and gates2025
Reduced capacitance between power via bar and gates2025
Direct backside self-aligned contact2025
Direct backside self-aligned contact2025
Backside self aligned skip via2025
Backside self aligned skip via2025
Backside self aligned skip via2025
Support dielectric fin to prevent gate flop-over in nanosheet transistors2025
Stacked transistors having self aligned backside contact with backside replaceme2025
Airgap spacer for power via2025