Issued Patents 2019
Showing 1–25 of 52 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522639 | Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET device | Hui Zang, Daniel Jaeger, Haigou Huang, Christopher Nassar, Jinsheng Gao +1 more | 2019-12-31 |
| 10504786 | Semiconductor fins for FinFET devices and sidewall image transfer (SIT) processes for manufacturing the same | Kangguo Cheng, Theodorus E. Standaert | 2019-12-10 |
| 10497612 | Methods of forming contact structures on integrated circuit products | Ruilong Xie, Lars Liebmann, Balasubramanian S. Pranatharthi Haran | 2019-12-03 |
| 10497629 | Self-aligned punch through stopper liner for bulk FinFET | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-12-03 |
| 10453934 | Vertical transport FET devices having air gap top spacer | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-10-22 |
| 10439049 | Nanosheet device with close source drain proximity | Shogo Mochizuki, Alexander Reznicek | 2019-10-08 |
| 10418455 | Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET device | Hui Zang, Daniel Jaeger, Haigou Huang, Christopher Nassar, Jinsheng Gao +1 more | 2019-09-17 |
| 10418280 | Fabrication of self-aligned gate contacts and source/drain contacts directly above gate electrodes and source/drains | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-09-17 |
| 10403740 | Gate planarity for FinFET using dummy polish stop | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-09-03 |
| 10396069 | Approach to fabrication of an on-chip resistor with a field effect transistor | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-08-27 |
| 10396027 | Electrical fuse and/or resistor structures | Kangguo Cheng, Ali Khakifirooz, Juntao Li | 2019-08-27 |
| 10388576 | Semiconductor device including dual trench epitaxial dual-liner contacts | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-08-20 |
| 10388718 | Metal-insulator-metal capacitor structure | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-08-20 |
| 10373905 | Integrating metal-insulator-metal capacitors with air gap process flow | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-08-06 |
| 10361210 | Low-drive current FinFET structure for improving circuit density of ratioed logic in SRAM devices | Dechao Guo, Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2019-07-23 |
| 10361307 | Contact structure and extension formation for III-V nFET | Alexander Reznicek | 2019-07-23 |
| 10361155 | Electrical fuse and/or resistor structures | Kangguo Cheng, Ali Khakifirooz, Juntao Li | 2019-07-23 |
| 10347765 | Split fin field effect transistor enabling back bias on fin type field effect transistors | Zuoguang Liu, Xin Miao, Tenko Yamashita | 2019-07-09 |
| 10332796 | Fin pitch scaling for high voltage devices and low voltage devices on the same wafer | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-06-25 |
| 10326000 | FinFET with reduced parasitic capacitance | Emre Alptekin, Sivananda K. Kanakasabapathy | 2019-06-18 |
| 10325999 | Contact area to trench silicide resistance reduction by high-resistance interface removal | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-06-18 |
| 10319640 | FinFET devices | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-06-11 |
| 10319840 | Fin field effect transistor fabrication and devices having inverted T-shaped gate | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2019-06-11 |
| 10312318 | Metal-insulator-metal capacitor structure | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-06-04 |
| 10312377 | Localized fin width scaling using a hydrogen anneal | Shogo Mochizuki, Tenko Yamashita, Chun-Chen Yeh | 2019-06-04 |