Issued Patents 2019
Showing 26–50 of 52 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10304941 | Replacement metal gate structures | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-05-28 |
| 10297448 | SiGe fins formed on a substrate | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-05-21 |
| 10297689 | Precise control of vertical transistor gate length | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-05-21 |
| 10297614 | Gate top spacer for FinFET | Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek | 2019-05-21 |
| 10290633 | CMOS compatible fuse or resistor using self-aligned contacts | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-05-14 |
| 10283586 | Capacitors | Kangguo Cheng, Christopher J. Penny, Theodorus E. Standaert, Junli Wang | 2019-05-07 |
| 10283406 | Fabrication of self-aligned gate contacts and source/drain contacts directly above gate electrodes and source/drains | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-05-07 |
| 10276658 | FinFET devices | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-04-30 |
| 10269644 | Fin pitch scaling for high voltage devices and low voltage devices on the same wafer | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-04-23 |
| 10256327 | Forming a fin using double trench epitaxy | Pouya Hashemi, Shogo Mochizuki, Alexander Reznicek | 2019-04-09 |
| 10249537 | Method and structure for forming FinFET CMOS with dual doped STI regions | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-04-02 |
| 10249536 | Semiconductor fins for FinFET devices and sidewall image transfer (SIT) processes for manufacturing the same | Kangguo Cheng, Theodorus E. Standaert | 2019-04-02 |
| 10236293 | FinFET CMOS with silicon fin N-channel FET and silicon germanium fin P-channel FET | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-03-19 |
| 10236380 | Precise control of vertical transistor gate length | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-03-19 |
| 10236359 | Replacement metal gate structures | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-03-19 |
| 10236289 | Approach to fabrication of an on-chip resistor with a field effect transistor | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-03-19 |
| 10224417 | Fin field effect transistor fabrication and devices having inverted T-shaped gate | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2019-03-05 |
| 10224420 | Punch through stopper in bulk finFET device | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2019-03-05 |
| 10224247 | FinFET devices | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-03-05 |
| 10217840 | Replacement metal gate structures | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-02-26 |
| 10204916 | Selective epitaxy growth for semiconductor devices with fin field-effect transistors (FinFET) | Kangguo Cheng, Ali Khakifirooz | 2019-02-12 |
| 10177256 | Replacement metal gate structures | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-01-08 |
| 10177154 | Structure and method to prevent EPI short between trenches in FinFET eDRAM | Michael V. Aquilino, Kangguo Cheng, Gregory Costrini, Ali Khakifirooz, Byeong Y. Kim +5 more | 2019-01-08 |
| 10170581 | FinFET with reduced parasitic capacitance | Emre Alptekin, Sivananda K. Kanakasabapathy | 2019-01-01 |
| 10170620 | Substantially defect free relaxed heterogeneous semiconductor fins on bulk substrates | Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek | 2019-01-01 |