| 10522654 |
Gate tie-down enablement with inner spacer |
Su Chen Fan, Andre P. Labonte, Sanjay C. Mehta |
2019-12-31 |
$4,449,000 |
| 10522403 |
Middle of the line self-aligned direct pattern contacts |
Jason E. Stephens, Daniel Chanemougame, Ruilong Xie, Gregory A. Northrop |
2019-12-31 |
$50,351,000 |
| 10504790 |
Methods of forming conductive spacers for gate contacts and the resulting device |
Ruilong Xie, Bipul C. Paul, Daniel Chanemougame, Nigel G. Cave |
2019-12-10 |
$38,861,000 |
| 10497612 |
Methods of forming contact structures on integrated circuit products |
Ruilong Xie, Balasubramanian S. Pranatharthi Haran, Veeraraghavan S. Basker |
2019-12-03 |
$65,885,000 |
| 10497798 |
Vertical field effect transistor with self-aligned contacts |
Ruilong Xie, Steven Bentley, Puneet Harischandra Suvarna, Chanro Park, Min Gyu Sung +2 more |
2019-12-03 |
$65,885,000 |
| 10490455 |
Gate contact structures and cross-coupled contact structures for transistor devices |
Ruilong Xie, Youngtag Woo, Daniel Chanemougame, Bipul C. Paul, Heimanu Niebojewski +3 more |
2019-11-26 |
$74,571,000 |
| 10490641 |
Methods of forming a gate contact structure for a transistor |
Ruilong Xie, Hao Tang, Cheng Chi, Daniel Chanemougame, Mark V. Raymond |
2019-11-26 |
$74,571,000 |
| 10483363 |
Methods of forming a gate contact structure above an active region of a transistor |
Ruilong Xie, Hao Tang, Cheng Chi, Daniel Chanemougame, Mark V. Raymond |
2019-11-19 |
$41,143,000 |
| 10475692 |
Self aligned buried power rail |
Nicholas V. LiCausi, Guillaume Bouche |
2019-11-12 |
$44,011,000 |
| 10468300 |
Contacting source and drain of a transistor device |
Ruilong Xie, Andre P. Labonte, Daniel Chanemougame, Chanro Park, Nigel G. Cave +1 more |
2019-11-05 |
$31,380,000 |
| 10446653 |
Transistor-based semiconductor device with air-gap spacers and gate contact over active area |
Ruilong Xie, Min Gyu Sung, Chanro Park, Hoon Kim |
2019-10-15 |
$19,042,000 |
| 10418484 |
Vertical field effect transistors incorporating U-shaped semiconductor bodies and methods |
Ruilong Xie, Edward J. Nowak, Julien Frougier, Jia Zeng |
2019-09-17 |
$38,956,000 |
| 10411010 |
Tall single-fin FIN-type field effect transistor structures and methods |
Ruilong Xie, Andreas Knorr, Murat Kerem Akarvardar, Nigel G. Cave |
2019-09-10 |
$36,532,000 |
| 10388652 |
Intergrated circuit structure including single diffusion break abutting end isolation region, and methods of forming same |
Yongiun Shi, Lei Sun, Laertis Economikos, Ruilong Xie, Chanro Park +4 more |
2019-08-20 |
$22,608,000 |
| 10374040 |
Method to form low resistance contact |
Daniel Chanemougame, Ruilong Xie |
2019-08-06 |
$34,724,000 |
| 10332977 |
Gate tie-down enablement with inner spacer |
Su Chen Fan, Andre P. Labonte, Sanjay C. Mehta |
2019-06-25 |
$2,152,000 |
| 10332803 |
Hybrid gate-all-around (GAA) field effect transistor (FET) structure and method of forming |
Ruilong Xie, Edward J. Nowak, Bipul C. Paul, Steven R. Soss, Julien Frougier +1 more |
2019-06-25 |
$33,212,000 |
| 10312154 |
Method of forming vertical FinFET device having self-aligned contacts |
Ruilong Xie, Steven Bentley, Puneet Harischandra Suvarna, Chanro Park, Min Gyu Sung +2 more |
2019-06-04 |
$35,371,000 |
| 10304833 |
Method of forming complementary nano-sheet/wire transistor devices with same depth contacts |
Puneet Harischandra Suvarna, Bipul C. Paul, Ruilong Xie, Bartlomiej Jan Pawlak, Daniel Chanemougame +2 more |
2019-05-28 |
$30,095,000 |
| 10304832 |
Integrated circuit structure incorporating stacked field effect transistors and method |
Daniel Chanemougame, Ruilong Xie |
2019-05-28 |
$30,095,000 |
| 10290549 |
Integrated circuit structure, gate all-around integrated circuit structure and methods of forming same |
Ruilong Xie, Julien Frougier, Min Gyu Sung, Edward J. Nowak, Nigel G. Cave +2 more |
2019-05-14 |
$20,760,000 |
| 10290544 |
Methods of forming conductive contact structures to semiconductor devices and the resulting structures |
Ruilong Xie, Daniel Chanemougame, Chanro Park |
2019-05-14 |
$20,760,000 |
| 10283408 |
Middle of the line (MOL) contacts with two-dimensional self-alignment |
Ruilong Xie, Chanro Park, Andre P. Labonte |
2019-05-07 |
$22,156,000 |
| 10283621 |
Method of forming vertical field effect transistors with self-aligned gates and gate extensions and the resulting structure |
Ruilong Xie, Hui Zang, Steven Bentley |
2019-05-07 |
$22,156,000 |
| 10269812 |
Forming contacts for VFETs |
Ruilong Xie, Daniel Chanemougame, Chanro Park, John H. Zhang, Steven Bentley +1 more |
2019-04-23 |
$44,921,000 |
