Issued Patents 2019
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10453521 | Layout of semiconductor device for selectively operating as insulating circuit or driving circuit | Sang-Yeop Baeck, Tae Hyung Kim, Daeyoung Moon, Dong-Wook Seo, Inhak Lee +6 more | 2019-10-22 |
| 10446653 | Transistor-based semiconductor device with air-gap spacers and gate contact over active area | Ruilong Xie, Min Gyu Sung, Chanro Park, Lars Liebmann | 2019-10-15 |
| 10446399 | Hard mask layer to reduce loss of isolation material during dummy gate removal | Ruilong Xie, Min Gyu Sung, Chanro Park | 2019-10-15 |
| 10410933 | Replacement metal gate patterning for nanosheet devices | Ruilong Xie, Chanro Park, Min Gyu Sung, Hui Zang, Guowei Xu | 2019-09-10 |
| 10319627 | Air-gap spacers for field-effect transistors | Chanro Park, Min Gyu Sung, Ruilong Xie | 2019-06-11 |
| 10236291 | Methods, apparatus and system for STI recess control for highly scaled finFET devices | Min Gyu Sung, Chanro Park, Ruilong Xie, Kwan-Yong Lim | 2019-03-19 |
| 10229855 | Methods of forming transistor devices with different threshold voltages and the resulting devices | Ruilong Xie, Min Gyu Sung, Chanro Park | 2019-03-12 |
| 10199264 | Self aligned interconnect structures | Xunyuan Zhang, Roderick A. Augur | 2019-02-05 |
| 10176996 | Replacement metal gate and fabrication process with reduced lithography steps | Min Gyu Sung, Chanro Park | 2019-01-08 |
| 10177241 | Methods of forming a gate contact for a transistor above the active region and an air gap adjacent the gate of the transistor | Chanro Park, Ruilong Xie, Min Gyu Sung | 2019-01-08 |