Issued Patents 2019
Showing 1–6 of 6 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522538 | Using source/drain contact cap during gate cut | Haiting Wang, Shesh Mani Pandey, Jiehui Shu, Laertis Economikos, Hui Zang +2 more | 2019-12-31 |
| 10522644 | Different upper and lower spacers for contact | Hui Zang, Haiting Wang, Scott Beasor | 2019-12-31 |
| 10446550 | Cut inside replacement metal gate trench to mitigate N-P proximity effect | Balaji Kannan, Ayse M. Ozbek, Tao Chu, Bala Haran, Vishal Chhabra +1 more | 2019-10-15 |
| 10431499 | Insulating gate separation structure | Hui Zang, Haiting Wang, Yue Zhong | 2019-10-01 |
| 10410933 | Replacement metal gate patterning for nanosheet devices | Ruilong Xie, Chanro Park, Min Gyu Sung, Hoon Kim, Hui Zang | 2019-09-10 |
| 10373877 | Methods of forming source/drain contact structures on integrated circuit products | Haiting Wang, Hong Yu, Hui Zang, Wei Zhao, Yue Zhong +3 more | 2019-08-06 |