Issued Patents 2019
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522410 | Performing concurrent diffusion break, gate and source/drain contact cut etch processes | Laertis Economikos, Hui Zang, Ruilong Xie, Haiting Wang | 2019-12-31 |
| 10522679 | Selective shallow trench isolation (STI) fill for stress engineering in semiconductor structures | Ashish Jha, Xinyuan Dou, Xusheng Wu, Dongil Choi, Edmund K. Banghart +1 more | 2019-12-31 |
| 10475693 | Method for forming single diffusion breaks between finFET devices and the resulting devices | Jiehui Shu, Jinping Liu, Hui Zang | 2019-11-12 |
| 10475890 | Scaled memory structures or other logic devices with middle of the line cuts | Haiting Wang, Wei Zhao, Hui Zang, Zhenyu Hu, Scott Beasor +3 more | 2019-11-12 |
| 10446683 | Methods, apparatus and system for forming sigma shaped source/drain lattice | Xusheng Wu | 2019-10-15 |
| 10403548 | Forming single diffusion break and end isolation region after metal gate replacement, and related structure | Hui Zang | 2019-09-03 |
| 10373877 | Methods of forming source/drain contact structures on integrated circuit products | Haiting Wang, Hui Zang, Wei Zhao, Yue Zhong, Guowei Xu +3 more | 2019-08-06 |