Issued Patents 2019
Showing 1–2 of 2 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10446550 | Cut inside replacement metal gate trench to mitigate N-P proximity effect | Balaji Kannan, Ayse M. Ozbek, Tao Chu, Bala Haran, Katsunori Onishi +1 more | 2019-10-15 |
| 10269932 | Asymmetric formation of epi semiconductor material in source/drain regions of FinFET devices | Ankur Arya, Brian J. Greene, Qun Gao, Christopher Nassar, Junsic Hong | 2019-04-23 |