Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Contacting source and drain of a transistor device

Contacting source and drain of a transistor device

US Patent 10468300 · Granted Nov 5, 2019

Estimated economic value: $31,380,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method and structure to incorporate multiple low loss photonic circuit component2025
Structure and method to remove semiconductor chip material for optical signal ac2025
Inverted top-tier FET for multi-tier gate-on-gate 3-dimension integration (3Di)2025
Inverted top-tier FET for multi-tier gate-on-gate 3-dimension integration (3Di)2025
Low loss optical interposer2025
TSV and backside power distribution structure2025
Wraparound contact with reduced distance to channel2025
Nanowire source/drain formation for nanosheet device2025
Local enlarged via-to-backside power rail2025
Skip-level TSV with hybrid dielectric scheme for backside power delivery2025
Dual structured buried rail2025
Method and structure of forming independent contact for staggered CFET2025