Issued Patents 2019
Showing 1–25 of 25 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522403 | Middle of the line self-aligned direct pattern contacts | Jason E. Stephens, Ruilong Xie, Lars Liebmann, Gregory A. Northrop | 2019-12-31 |
| 10510620 | Work function metal patterning for N-P space between active nanostructures | Steven R. Soss, Steven Bentley, Julien Frougier, Ruilong Xie | 2019-12-17 |
| 10504790 | Methods of forming conductive spacers for gate contacts and the resulting device | Ruilong Xie, Lars Liebmann, Bipul C. Paul, Nigel G. Cave | 2019-12-10 |
| 10490455 | Gate contact structures and cross-coupled contact structures for transistor devices | Ruilong Xie, Youngtag Woo, Bipul C. Paul, Lars Liebmann, Heimanu Niebojewski +3 more | 2019-11-26 |
| 10490641 | Methods of forming a gate contact structure for a transistor | Ruilong Xie, Hao Tang, Cheng Chi, Lars Liebmann, Mark V. Raymond | 2019-11-26 |
| 10483363 | Methods of forming a gate contact structure above an active region of a transistor | Ruilong Xie, Hao Tang, Cheng Chi, Lars Liebmann, Mark V. Raymond | 2019-11-19 |
| 10468300 | Contacting source and drain of a transistor device | Ruilong Xie, Andre P. Labonte, Lars Liebmann, Chanro Park, Nigel G. Cave +1 more | 2019-11-05 |
| 10388652 | Intergrated circuit structure including single diffusion break abutting end isolation region, and methods of forming same | Yongiun Shi, Lei Sun, Laertis Economikos, Ruilong Xie, Lars Liebmann +4 more | 2019-08-20 |
| 10381354 | Contact structures and methods of making the contact structures | Emilie Bourjot | 2019-08-13 |
| 10374040 | Method to form low resistance contact | Lars Liebmann, Ruilong Xie | 2019-08-06 |
| 10347745 | Methods of forming bottom and top source/drain regions on a vertical transistor device | Puneet Harischandra Suvarna, Steven Bentley | 2019-07-09 |
| 10332803 | Hybrid gate-all-around (GAA) field effect transistor (FET) structure and method of forming | Ruilong Xie, Edward J. Nowak, Bipul C. Paul, Steven R. Soss, Julien Frougier +1 more | 2019-06-25 |
| 10304833 | Method of forming complementary nano-sheet/wire transistor devices with same depth contacts | Puneet Harischandra Suvarna, Bipul C. Paul, Ruilong Xie, Bartlomiej Jan Pawlak, Lars Liebmann +2 more | 2019-05-28 |
| 10304832 | Integrated circuit structure incorporating stacked field effect transistors and method | Lars Liebmann, Ruilong Xie | 2019-05-28 |
| 10290549 | Integrated circuit structure, gate all-around integrated circuit structure and methods of forming same | Ruilong Xie, Julien Frougier, Min Gyu Sung, Edward J. Nowak, Nigel G. Cave +2 more | 2019-05-14 |
| 10290544 | Methods of forming conductive contact structures to semiconductor devices and the resulting structures | Ruilong Xie, Lars Liebmann, Chanro Park | 2019-05-14 |
| 10269812 | Forming contacts for VFETs | Ruilong Xie, Lars Liebmann, Chanro Park, John H. Zhang, Steven Bentley +1 more | 2019-04-23 |
| 10256316 | Steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Nicolas Loubet, Ruilong Xie, Ali Razavieh, Kangguo Cheng | 2019-04-09 |
| 10249535 | Forming TS cut for zero or negative TS extension and resulting device | Ruilong Xie, Lars Liebmann, Nigel G. Cave | 2019-04-02 |
| 10249728 | Air-gap gate sidewall spacer and method | Andre P. Labonte, Ruilong Xie, Lars Liebmann, Nigel G. Cave, Guillaume Bouche | 2019-04-02 |
| 10236215 | Methods of forming gate contact structures and cross-coupled contact structures for transistor devices | Ruilong Xie, Youngtag Woo, Bipul C. Paul, Lars Liebmann, Heimanu Niebojewski +3 more | 2019-03-19 |
| 10236296 | Cross-coupled contact structure on IC products and methods of making such contact structures | Emilie Bourjot, Bipul C. Paul | 2019-03-19 |
| 10230000 | Vertical-transport transistors with self-aligned contacts | Emilie Bourjot, Tek Po Rinus Lee, Ruilong Xie, Hui Zang | 2019-03-12 |
| 10192819 | Integrated circuit structure incorporating stacked field effect transistors | Lars Liebmann, Ruilong Xie | 2019-01-29 |
| 10170520 | Negative-capacitance steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Nicolas Loubet, Ruilong Xie, Ali Razavieh, Kangguo Cheng | 2019-01-01 |