Issued Patents 2019
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10510622 | Vertically stacked complementary-FET device with independent gate control | Julien Frougier, Ruilong Xie | 2019-12-17 |
| 10497798 | Vertical field effect transistor with self-aligned contacts | Ruilong Xie, Steven Bentley, Chanro Park, Min Gyu Sung, Lars Liebmann +2 more | 2019-12-03 |
| 10446659 | Negative capacitance integration through a gate contact | Steven Bentley, Rohit Galatage | 2019-10-15 |
| 10418449 | Circuits based on complementary field-effect transistors | Bipul C. Paul, Ruilong Xie | 2019-09-17 |
| 10347745 | Methods of forming bottom and top source/drain regions on a vertical transistor device | Steven Bentley, Daniel Chanemougame | 2019-07-09 |
| 10332969 | Negative capacitance matching in gate electrode structures | Rohit Galatage, Steven Bentley, Zoran Krivokapic | 2019-06-25 |
| 10312154 | Method of forming vertical FinFET device having self-aligned contacts | Ruilong Xie, Steven Bentley, Chanro Park, Min Gyu Sung, Lars Liebmann +2 more | 2019-06-04 |
| 10304833 | Method of forming complementary nano-sheet/wire transistor devices with same depth contacts | Bipul C. Paul, Ruilong Xie, Bartlomiej Jan Pawlak, Lars Liebmann, Daniel Chanemougame +2 more | 2019-05-28 |
| 10256158 | Insulated epitaxial structures in nanosheet complementary field effect transistors | Julien Frougier, Ruilong Xie, Steven Bentley | 2019-04-09 |
| 10236379 | Vertical FET with self-aligned source/drain regions and gate length based on channel epitaxial growth process | Steven Bentley, Julien Frougier, Bartlomiej Jan Pawlak | 2019-03-19 |
| 10236292 | Complementary FETs with wrap around contacts and methods of forming same | Julien Frougier, Ruilong Xie, Hiroaki Niimi, Steven Bentley, Ali Razavieh | 2019-03-19 |
| 10192867 | Complementary FETs with wrap around contacts and method of forming same | Julien Frougier, Ruilong Xie, Hiroaki Niimi, Steven Bentley, Ali Razavieh | 2019-01-29 |
| 10170617 | Vertical transport field effect transistors | Jiseok Kim, Hiroaki Niimi, Hoon Kim, Steven Bentley, Jody A. Fronheiser | 2019-01-01 |