Issued Patents 2019
Showing 1–20 of 20 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10510622 | Vertically stacked complementary-FET device with independent gate control | Ruilong Xie, Puneet Harischandra Suvarna | 2019-12-17 |
| 10510620 | Work function metal patterning for N-P space between active nanostructures | Daniel Chanemougame, Steven R. Soss, Steven Bentley, Ruilong Xie | 2019-12-17 |
| 10475899 | Method of forming gate-all-around (GAA) FinFET and GAA FinFET formed thereby | Ruilong Xie, Andreas Knorr, Hui Zang, Min-hwa Chi | 2019-11-12 |
| 10431663 | Method of forming integrated circuit with gate-all-around field effect transistor and the resulting structure | Ruilong Xie, Balasubramanian Pranatharthiharan, Pietro Montanini | 2019-10-01 |
| 10424651 | Forming nanosheet transistor using sacrificial spacer and inner spacers | Kangguo Cheng, Nicolas Loubet | 2019-09-24 |
| 10418484 | Vertical field effect transistors incorporating U-shaped semiconductor bodies and methods | Ruilong Xie, Lars Liebmann, Edward J. Nowak, Jia Zeng | 2019-09-17 |
| 10388732 | Nanosheet field-effect transistors including a two-dimensional semiconducting material | Ruilong Xie, Nicolas Loubet, Kangguo Cheng, Juntao Li | 2019-08-20 |
| 10388760 | Sub-thermal switching slope vertical field effect transistor with dual-gate feedback loop mechanism | Ruilong Xie, Steven R. Bentley, Kangguo Cheng, Nicolas Loubet, Pietro Montanini | 2019-08-20 |
| 10381459 | Transistors with H-shaped or U-shaped channels and method for forming the same | Ruilong Xie, Yi Qi, Nigel G. Cave, Edward J. Nowak, Andreas Knorr | 2019-08-13 |
| 10332803 | Hybrid gate-all-around (GAA) field effect transistor (FET) structure and method of forming | Ruilong Xie, Edward J. Nowak, Bipul C. Paul, Steven R. Soss, Daniel Chanemougame +1 more | 2019-06-25 |
| 10290549 | Integrated circuit structure, gate all-around integrated circuit structure and methods of forming same | Ruilong Xie, Min Gyu Sung, Edward J. Nowak, Nigel G. Cave, Lars Liebmann +2 more | 2019-05-14 |
| 10276442 | Wrap-around contacts formed with multiple silicide layers | Ruilong Xie, Kangguo Cheng, Adra Carr, Nicolas Loubet | 2019-04-30 |
| 10269983 | Stacked nanosheet field-effect transistor with air gap spacers | Ruilong Xie, Hui Zang, Kangguo Cheng, Tenko Yamashita, Chun-Chen Yeh | 2019-04-23 |
| 10256158 | Insulated epitaxial structures in nanosheet complementary field effect transistors | Ruilong Xie, Steven Bentley, Puneet Harischandra Suvarna | 2019-04-09 |
| 10256316 | Steep-switch field effect transistor with integrated bi-stable resistive system | Nicolas Loubet, Ruilong Xie, Daniel Chanemougame, Ali Razavieh, Kangguo Cheng | 2019-04-09 |
| 10236292 | Complementary FETs with wrap around contacts and methods of forming same | Ruilong Xie, Puneet Harischandra Suvarna, Hiroaki Niimi, Steven Bentley, Ali Razavieh | 2019-03-19 |
| 10236379 | Vertical FET with self-aligned source/drain regions and gate length based on channel epitaxial growth process | Steven Bentley, Puneet Harischandra Suvarna, Bartlomiej Jan Pawlak | 2019-03-19 |
| 10236218 | Methods, apparatus and system for forming wrap-around contact with dual silicide | Ruilong Xie, Hiroaki Niimi, Nigel G. Cave, Xusheng Wu | 2019-03-19 |
| 10192867 | Complementary FETs with wrap around contacts and method of forming same | Ruilong Xie, Puneet Harischandra Suvarna, Hiroaki Niimi, Steven Bentley, Ali Razavieh | 2019-01-29 |
| 10170520 | Negative-capacitance steep-switch field effect transistor with integrated bi-stable resistive system | Nicolas Loubet, Ruilong Xie, Daniel Chanemougame, Ali Razavieh, Kangguo Cheng | 2019-01-01 |