Issued Patents 2019
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10515679 | Magneto-resistive memory structures with improved sensing, and associated sensing methods | Akhilesh Jaiswal, Ajey Poovannummoottil Jacob, William J. Taylor, Jr., Danny Pak-Chum Shum | 2019-12-24 |
| 10510392 | Integrated circuits having memory cells with shared bit lines and shared source lines | Akhilesh Jaiswal, Ajey Poovannummoottil Jacob, William J. Taylor, Jr., Danny Pak-Chum Shum | 2019-12-17 |
| 10504790 | Methods of forming conductive spacers for gate contacts and the resulting device | Ruilong Xie, Lars Liebmann, Daniel Chanemougame, Nigel G. Cave | 2019-12-10 |
| 10490455 | Gate contact structures and cross-coupled contact structures for transistor devices | Ruilong Xie, Youngtag Woo, Daniel Chanemougame, Lars Liebmann, Heimanu Niebojewski +3 more | 2019-11-26 |
| 10439064 | Dual port vertical transistor memory cell | Randy W. Mann | 2019-10-08 |
| 10418368 | Buried local interconnect in source/drain region | Steven Bentley, Steven R. Soss | 2019-09-17 |
| 10418449 | Circuits based on complementary field-effect transistors | Ruilong Xie, Puneet Harischandra Suvarna | 2019-09-17 |
| 10403629 | Six-transistor (6T) SRAM cell structure | Randy W. Mann | 2019-09-03 |
| 10332803 | Hybrid gate-all-around (GAA) field effect transistor (FET) structure and method of forming | Ruilong Xie, Edward J. Nowak, Steven R. Soss, Julien Frougier, Daniel Chanemougame +1 more | 2019-06-25 |
| 10304833 | Method of forming complementary nano-sheet/wire transistor devices with same depth contacts | Puneet Harischandra Suvarna, Ruilong Xie, Bartlomiej Jan Pawlak, Lars Liebmann, Daniel Chanemougame +2 more | 2019-05-28 |
| 10236215 | Methods of forming gate contact structures and cross-coupled contact structures for transistor devices | Ruilong Xie, Youngtag Woo, Daniel Chanemougame, Lars Liebmann, Heimanu Niebojewski +3 more | 2019-03-19 |
| 10236296 | Cross-coupled contact structure on IC products and methods of making such contact structures | Daniel Chanemougame, Emilie Bourjot | 2019-03-19 |
| 10170484 | Integrated circuit structure incorporating multiple gate-all-around field effect transistors having different drive currents and method | Min Gyu Sung, Ruilong Xie | 2019-01-01 |