| 10490641 |
Methods of forming a gate contact structure for a transistor |
Ruilong Xie, Hao Tang, Daniel Chanemougame, Lars Liebmann, Mark V. Raymond |
2019-11-26 |
| 10483363 |
Methods of forming a gate contact structure above an active region of a transistor |
Ruilong Xie, Hao Tang, Daniel Chanemougame, Lars Liebmann, Mark V. Raymond |
2019-11-19 |
| 10475660 |
Method for fin formation with a self-aligned directed self-assembly process and cut-last scheme |
Fee Li Lie, Chi-Chun Liu, Ruilong Xie |
2019-11-12 |
| 10461174 |
Vertical field effect transistors with self aligned gate and source/drain contacts |
Hao Tang, Ruilong Xie |
2019-10-29 |
| 10431651 |
Nanosheet transistor with robust source/drain isolation from substrate |
Robin Hsin Kuo Chao, Kangguo Cheng, Ruilong Xie, John H. Zhang |
2019-10-01 |
| 10418485 |
Forming a combination of long channel devices and vertical transport Fin field effect transistors on the same substrate |
Tenko Yamashita, Chen Zhang |
2019-09-17 |
| 10411127 |
Forming a combination of long channel devices and vertical transport fin field effect transistors on the same substrate |
Tenko Yamashita, Chen Zhang |
2019-09-10 |
| 10395939 |
Method for fin formation with a self-aligned directed self-assembly process and cut-last scheme |
Fee Li Lie, Chi-Chun Liu, Ruilong Xie |
2019-08-27 |
| 10366931 |
Nanosheet devices with CMOS epitaxy and method of forming |
Ruilong Xie, Pietro Montanini, Tenko Yamashita, Nicolas Loubet |
2019-07-30 |
| 10361315 |
Method and apparatus of fabricating source and drain epitaxy for vertical field effect transistor |
Chun-Chen Yeh, Kangguo Cheng, Ruilong Xie, Tenko Yamashita, Chen Zhang |
2019-07-23 |
| 10283407 |
Two-dimensional self-aligned super via integration on self-aligned gate contact |
Ruilong Xie |
2019-05-07 |
| 10263099 |
Self-aligned finFET formation |
Fee Li Lie, Chi-Chun Liu, Ruilong Xie |
2019-04-16 |
| 10242881 |
Self-aligned single dummy fin cut with tight pitch |
Kangguo Cheng, Chi-Chun Liu, Peng Xu |
2019-03-26 |
| 10170591 |
Self-aligned finFET formation |
Fee Li Lie, Chi-Chun Liu, Ruilong Xie |
2019-01-01 |
