Issued Patents 2019
Showing 25 most recent of 106 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522649 | Inverse T-shaped contact structures having air gap spacers | Kangguo Cheng, Choonghyun Lee, Juntao Li, Heng Wu | 2019-12-31 |
| 10522594 | Resistive memory with a plurality of resistive random access memory cells each comprising a transistor and a resistive element | Kangguo Cheng, Juntao Li, Choonghyun Lee | 2019-12-31 |
| 10522636 | Fin field-effect transistor for input/output device integrated with nanosheet field-effect transistor | Chun Wing Yeung, Chen Zhang, Huiming Bu, Kangguo Cheng | 2019-12-31 |
| 10516028 | Transistor with asymmetric spacers | Zhenxing Bi, Kangguo Cheng, Heng Wu | 2019-12-24 |
| 10510892 | Forming a sacrificial liner for dual channel devices | Huiming Bu, Kangguo Cheng, Dechao Guo, Sivananda K. Kanakasabapathy | 2019-12-17 |
| 10510885 | Transistor with asymmetric source/drain overlap | Kangguo Cheng, Heng Wu, Zhenxing Bi | 2019-12-17 |
| 10504794 | Self-aligned silicide/germanide formation to reduce external resistance in a vertical field-effect transistor | Choonghyun Lee, Kangguo Cheng, Juntao Li | 2019-12-10 |
| 10504793 | Hybrid-channel nano-sheet FETs | Zhenxing Bi, Kangguo Cheng, Wenyu Xu | 2019-12-10 |
| 10497796 | Vertical transistor with reduced gate length variation | Kangguo Cheng, Juntao Li, Choonghyun Lee | 2019-12-03 |
| 10490546 | Forming on-chip metal-insulator-semiconductor capacitor | Zhenxing Bi, Kangguo Cheng, Chen Zhang | 2019-11-26 |
| 10490447 | Airgap formation in BEOL interconnect structure using sidewall image transfer | Kangguo Cheng, Ekmini Anuja De Silva, Juntao Li, Yi Song | 2019-11-26 |
| 10490667 | Three-dimensional field effect device | Huimei Zhou, Su Chen Fan, Shogo Mochizuki, Nicolas Loubet | 2019-11-26 |
| 10483382 | Tunnel transistor | Kangguo Cheng, Heng Wu, Zhenxing Bi | 2019-11-19 |
| 10460982 | Formation of semiconductor devices with dual trench isolations | Juntao Li, Kangguo Cheng, Choonghyun Lee | 2019-10-29 |
| 10453920 | Techniques for forming finFET transistors with same fin pitch and different source/drain epitaxy configurations | Kangguo Cheng | 2019-10-22 |
| 10453843 | Multiple finFET Formation with epitaxy separation | Kangguo Cheng, Juntao Li | 2019-10-22 |
| 10446276 | Method of manufacturing a SiC composite fuel cladding with inner Zr alloy liner | Edward J. Lahoda | 2019-10-15 |
| 10446647 | Approach to minimization of strain loss in strained fin field effect transistors | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2019-10-15 |
| 10446664 | Inner spacer formation and contact resistance reduction in nanosheet transistors | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2019-10-15 |
| 10446686 | Asymmetric dual gate fully depleted transistor | Terry Hook, Kangguo Cheng, Yi Song, Chen Zhang, Xin Miao | 2019-10-15 |
| 10439044 | Method and structure of fabricating I-shaped silicon germanium vertical field-effect transistors | Choonghyun Lee, Kangguo Cheng, Juntao Li | 2019-10-08 |
| 10438855 | Dual channel FinFETs having uniform fin heights | Zhenxing Bi, Kangguo Cheng, Jie Yang | 2019-10-08 |
| 10431660 | Self-limiting fin spike removal | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2019-10-01 |
| 10431667 | Vertical field effect transistors with uniform threshold voltage | Kangguo Cheng, Xin Miao, Heng Wu | 2019-10-01 |
| 10431646 | Electronic devices having spiral conductive structures | Kangguo Cheng, Xuefeng Liu, Chi-Chun Liu, Yongan Xu | 2019-10-01 |