| 10490447 |
Airgap formation in BEOL interconnect structure using sidewall image transfer |
Kangguo Cheng, Juntao Li, Yi Song, Peng Xu |
2019-11-26 |
| 10395925 |
Patterning material film stack comprising hard mask layer having high metal content interface to resist layer |
Adra Carr, Shanti Pancharatnam, Indira Seshadri, Yasir Sulehria |
2019-08-27 |
| 10388510 |
Wet strippable OPL using reversible UV crosslinking and de-crosslinking |
Nelson Felix, Jing Guo, Indira Seshadri |
2019-08-20 |
| 10374034 |
Undercut control in isotropic wet etch processes |
Chi-Chun Liu, Muthumanickam Sankarapandian, Kristin Schmidt, Noel Arellano, Robin Hsin Kuo Chao +2 more |
2019-08-06 |
| 10366879 |
Dry and wet etch resistance for atomic layer deposited TiO2 for SIT spacer application |
Cornelius Brown Peethala, Abraham Arceo de la Pena |
2019-07-30 |
| 10361127 |
Vertical transport FET with two or more gate lengths |
Gauri Karve, Fee Li Lie, Indira Seshadri, Mona A. Ebrish, Leigh Anne H. Clevenger +1 more |
2019-07-23 |
| 10354922 |
Simplified block patterning with wet strippable hardmask for high-energy implantation |
Indira Seshadri, Romain Lallement, Nelson Felix |
2019-07-16 |
| 10354885 |
Hard masks for block patterning |
Isabel C. Estrada-Raygoza, Yann Mignot, Indira Seshadri, Yongan Xu |
2019-07-16 |
| 10347540 |
Gate cut using selective deposition to prevent oxide loss |
Andrew M. Greene, Siva Kanakasabapathy |
2019-07-09 |
| 10347486 |
Patterning material film stack with metal-containing top coat for enhanced sensitivity in extreme ultraviolet (EUV) lithography |
Dario L. Goldfarb, Nelson Felix, Daniel A. Corliss, Rudy J. Wojtecki |
2019-07-09 |
| 10312140 |
Dielectric gap fill evaluation for integrated circuits |
Isabel Cristina Chu, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Gauri Karve, Fee Li Lie +3 more |
2019-06-04 |
| 10304744 |
Inverse tone direct print EUV lithography enabled by selective material deposition |
Praveen Joseph, Fee Li Lie, Stuart A. Sieg, Yann Mignot, Indira Seshadri |
2019-05-28 |
| 10276452 |
Low undercut N-P work function metal patterning in nanosheet replacement metal gate process |
Indira Seshadri, Jing Guo, Romain Lallement, Ruqiang Bao, Zhenxing Bi +1 more |
2019-04-30 |
| 10254652 |
Approach to lowering extreme ultraviolet exposure dose for inorganic hardmasks for extreme ultraviolet patterning |
Karen E. Petrillo, Indira Seshadri |
2019-04-09 |
| 10249512 |
Tunable TiOxNy hardmask for multilayer patterning |
Abraham Arceo de la Pena, Nelson Felix, Sivananda K. Kanakasabapathy |
2019-04-02 |
| 10176997 |
Direct gate patterning for vertical transport field effect transistor |
Indira Seshadri, Stuart A. Sieg, Wenyu Xu |
2019-01-08 |
| 10170582 |
Uniform bottom spacer for vertical field effect transistor |
Michael P. Belyansky, Cheng Chi, Tenko Yamashita |
2019-01-01 |
