| 10438972 |
Sub-fin removal for SOI like isolation with uniform active fin height |
Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, Eric R. Miller, John R. Sporre +1 more |
2019-10-08 |
| 10424663 |
Super long channel device within VFET architecture |
Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, Eric R. Miller, John R. Sporre +1 more |
2019-09-24 |
| 10381437 |
Semiconductor device and method of forming the semiconductor device |
Marc A. Bergendahl, Fee Li Lie, Eric R. Miller, Robert R. Robison, John R. Sporre +1 more |
2019-08-13 |
| 10381348 |
Structure and method for equal substrate to channel height between N and P fin-FETs |
Lawrence A. Clevenger, Leigh Anne H. Clevenger, Mona A. Ebrish, Fee Li Lie, Deepika Priyadarshini +2 more |
2019-08-13 |
| 10361127 |
Vertical transport FET with two or more gate lengths |
Fee Li Lie, Indira Seshadri, Mona A. Ebrish, Leigh Anne H. Clevenger, Ekmini Anuja De Silva +1 more |
2019-07-23 |
| 10312140 |
Dielectric gap fill evaluation for integrated circuits |
Isabel Cristina Chu, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Ekmini Anuja De Silva, Fee Li Lie +3 more |
2019-06-04 |
| 10304689 |
Margin for fin cut using self-aligned triple patterning |
Fee Li Lie, Eric R. Miller, Stuart A. Sieg, John R. Sporre, Sean Teehan |
2019-05-28 |
| 10243079 |
Utilizing multilayer gate spacer to reduce erosion of semiconductor fin during spacer patterning |
Andrew M. Greene, Hong He, Sivananda K. Kanakasabapathy, Eric R. Miller, Pietro Montanini |
2019-03-26 |
| 10229910 |
Separate N and P fin etching for reduced CMOS device leakage |
Isabel Cristina Chu, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Mona A. Ebrish, Fee Li Lie +3 more |
2019-03-12 |
| 10211321 |
Stress retention in fins of fin field-effect transistors |
Sivananda K. Kanakasabapathy, Juntao Li, Fee Li Lie, Stuart A. Sieg, John R. Sporre |
2019-02-19 |
| 10211319 |
Stress retention in fins of fin field-effect transistors |
Sivananda K. Kanakasabapathy, Juntao Li, Fee Li Lie, Stuart A. Sieg, John R. Sporre |
2019-02-19 |
| 10199503 |
Under-channel gate transistors |
Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, Eric R. Miller, John R. Sporre +1 more |
2019-02-05 |
| 10170477 |
Forming MOSFET structures with work function modification |
Ruqiang Bao, Derrick Liu, Robert R. Robison, Gen Tsutsui, Reinaldo Vega +1 more |
2019-01-01 |
