Issued Patents 2019
Showing 1–23 of 23 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10504798 | Gate cut in replacement metal gate process | Ruilong Xie, Chanro Park, Laertis Economikos, Andrew M. Greene, Siva Kanakasabapathy | 2019-12-10 |
| 10446452 | Method and structure for enabling controlled spacer RIE | Kangguo Cheng, Ryan O. Jung, Fee Li Lie, Eric R. Miller, Jeffrey C. Shearer +1 more | 2019-10-15 |
| 10438972 | Sub-fin removal for SOI like isolation with uniform active fin height | Marc A. Bergendahl, Kangguo Cheng, Gauri Karve, Fee Li Lie, Eric R. Miller +1 more | 2019-10-08 |
| 10424663 | Super long channel device within VFET architecture | Marc A. Bergendahl, Kangguo Cheng, Gauri Karve, Fee Li Lie, Eric R. Miller +1 more | 2019-09-24 |
| 10396181 | Forming stacked nanowire semiconductor device | Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, Eric R. Miller, Jeffrey C. Shearer +1 more | 2019-08-27 |
| 10381437 | Semiconductor device and method of forming the semiconductor device | Marc A. Bergendahl, Gauri Karve, Fee Li Lie, Eric R. Miller, Robert R. Robison +1 more | 2019-08-13 |
| 10347749 | Reducing bending in parallel structures in semiconductor fabrication | Balasubramanian Pranatharthiharan, Pietro Montanini, Ruilong Xie | 2019-07-09 |
| 10304689 | Margin for fin cut using self-aligned triple patterning | Gauri Karve, Fee Li Lie, Eric R. Miller, Stuart A. Sieg, Sean Teehan | 2019-05-28 |
| 10269931 | Vertical transport field effect transistor with precise gate length definition | Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, Eric R. Miller, Sean Teehan | 2019-04-23 |
| 10256326 | Forming stacked nanowire semiconductor device | Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, Eric R. Miller, Jeffrey C. Shearer +1 more | 2019-04-09 |
| 10256239 | Spacer formation preventing gate bending | Balasubramanian Pranatharthiharan, Eric R. Miller, Soon-Cheon Seo | 2019-04-09 |
| 10249762 | Vertically aligned nanowire channels with source/drain interconnects for nanosheet transistors | Marc A. Bergendahl, Kangguo Cheng, Eric R. Miller, Sean Teehan | 2019-04-02 |
| 10249533 | Method and structure for forming a replacement contact | Jeffrey C. Shearer, Nicole Saulnier, Hyung Joo Shin | 2019-04-02 |
| 10249738 | Nanosheet channel-to-source and drain isolation | Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, Eric R. Miller, Sean Teehan | 2019-04-02 |
| 10249753 | Gate cut on a vertical field effect transistor with a defined-width inorganic mask | Brent A. Anderson, Sivananda K. Kanakasabapathy, Jeffrey C. Shearer, Stuart A. Sieg, Junli Wang | 2019-04-02 |
| 10242981 | Fin cut during replacement gate formation | Andrew M. Greene, Balasubramanian Pranatharthiharan, Sivananda K. Kanakasabapathy | 2019-03-26 |
| 10229854 | FinFET gate cut after dummy gate removal | Siva Kanakasabapathy, Andrew M. Greene, Jeffrey C. Shearer, Nicole Saulnier | 2019-03-12 |
| 10224326 | Fin cut during replacement gate formation | Andrew M. Greene, Balasubramanian Pranatharthiharan, Sivananda K. Kanakasabapathy | 2019-03-05 |
| 10217634 | Fin patterns with varying spacing without fin cut | Marc A. Bergendahl, Kangguo Cheng, Sean Teehan | 2019-02-26 |
| 10211055 | Fin patterns with varying spacing without fin cut | Marc A. Bergendahl, Kangguo Cheng, Sean Teehan | 2019-02-19 |
| 10211321 | Stress retention in fins of fin field-effect transistors | Sivananda K. Kanakasabapathy, Gauri Karve, Juntao Li, Fee Li Lie, Stuart A. Sieg | 2019-02-19 |
| 10211319 | Stress retention in fins of fin field-effect transistors | Sivananda K. Kanakasabapathy, Gauri Karve, Juntao Li, Fee Li Lie, Stuart A. Sieg | 2019-02-19 |
| 10199503 | Under-channel gate transistors | Marc A. Bergendahl, Kangguo Cheng, Gauri Karve, Fee Li Lie, Eric R. Miller +1 more | 2019-02-05 |