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Self aligned replacement metal source/drain finFET |
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Multiple-threshold nanosheet transistors |
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| 10249739 |
Nanosheet MOSFET with partial release and source/drain epitaxy |
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| 10243041 |
Vertical fin field effect transistor with air gap spacers |
Hari V. Mallela, Reinaldo Vega, Rajasekhar Venigalla |
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| 10170477 |
Forming MOSFET structures with work function modification |
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| 10170584 |
Nanosheet field effect transistors with partial inside spacers |
Michael A. Guillorn, Terence B. Hook, Reinaldo Vega, Rajasekhar Venigalla |
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| 10170543 |
Vertical fin field effect transistor with air gap spacers |
Hari V. Mallela, Reinaldo Vega, Rajasekhar Venigalla |
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| 10170485 |
Three-dimensional stacked junctionless channels for dense SRAM |
Michael A. Guillorn, Reinaldo Vega, Rajasekhar Venigalla |
2019-01-01 |
