| 10424515 |
Vertical FET devices with multiple channel lengths |
Hari V. Mallela, Rajasekhar Venigalla |
2019-09-24 |
| 10418450 |
Self aligned replacement metal source/drain finFET |
Emre Alptekin, Robert R. Robison |
2019-09-17 |
| 10403628 |
Finfet based ZRAM with convex channel region |
Ravikumar Ramachandran |
2019-09-03 |
| 10381463 |
Patterned sidewall smoothing using a pre-smoothed inverted tone pattern |
Kafai Lai, Hari V. Mallela, Hiroyuki Miyazoe, Rajasekhar Venigalla |
2019-08-13 |
| 10340340 |
Multiple-threshold nanosheet transistors |
Ruqiang Bao, Michael A. Guillorn, Terence B. Hook, Nicolas Loubet, Robert R. Robison +1 more |
2019-07-02 |
| 10282646 |
Tag with tunable retro-reflectors |
Evan G. Colgan, Fuad E. Doany, Li-Wen Hung, Bucknell C. Webb |
2019-05-07 |
| 10283416 |
Vertical FETS with variable bottom spacer recess |
Hari V. Mallela, Rajasekhar Venigalla |
2019-05-07 |
| 10249739 |
Nanosheet MOSFET with partial release and source/drain epitaxy |
Michael A. Guillorn, Terence B. Hook, Nicolas Loubet, Robert R. Robison |
2019-04-02 |
| 10243041 |
Vertical fin field effect transistor with air gap spacers |
Hari V. Mallela, Robert R. Robison, Rajasekhar Venigalla |
2019-03-26 |
| 10242980 |
Semiconductor fin isolation by a well trapping fin portion |
Henry K. Utomo, Kangguo Cheng, Ramachandra Divakaruni, Ravikumar Ramachandran, Huiling Shang |
2019-03-26 |
| 10236344 |
Tunnel transistors with abrupt junctions |
Emre Alptekin, Hung H. Tran, Xiaobin Yuan |
2019-03-19 |
| 10177154 |
Structure and method to prevent EPI short between trenches in FinFET eDRAM |
Michael V. Aquilino, Veeraraghavan S. Basker, Kangguo Cheng, Gregory Costrini, Ali Khakifirooz +5 more |
2019-01-08 |
| 10170543 |
Vertical fin field effect transistor with air gap spacers |
Hari V. Mallela, Robert R. Robison, Rajasekhar Venigalla |
2019-01-01 |
| 10170485 |
Three-dimensional stacked junctionless channels for dense SRAM |
Michael A. Guillorn, Robert R. Robison, Rajasekhar Venigalla |
2019-01-01 |
| 10170477 |
Forming MOSFET structures with work function modification |
Ruqiang Bao, Gauri Karve, Derrick Liu, Robert R. Robison, Gen Tsutsui +1 more |
2019-01-01 |
| 10170584 |
Nanosheet field effect transistors with partial inside spacers |
Michael A. Guillorn, Terence B. Hook, Robert R. Robison, Rajasekhar Venigalla |
2019-01-01 |
| 10168427 |
Data readout via reflected ultrasound signals |
Li-Wen Hung |
2019-01-01 |
