Issued Patents 2019
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10453841 | Orientation engineering in complementary metal oxide semiconductor fin field effect transistor integration for increased mobility and sharper junction | Chia-Yu Chen, Bruce B. Doris, Hong He | 2019-10-22 |
| 10424515 | Vertical FET devices with multiple channel lengths | Hari V. Mallela, Reinaldo Vega | 2019-09-24 |
| 10388757 | Vertical transistor fabrication and devices | Brent A. Anderson, Bruce B. Doris, Seong-Dong Kim | 2019-08-20 |
| 10381463 | Patterned sidewall smoothing using a pre-smoothed inverted tone pattern | Kafai Lai, Hari V. Mallela, Hiroyuki Miyazoe, Reinaldo Vega | 2019-08-13 |
| 10283416 | Vertical FETS with variable bottom spacer recess | Hari V. Mallela, Reinaldo Vega | 2019-05-07 |
| 10256238 | Preserving channel strain in fin cuts | Andrew M. Greene, Dechao Guo, Ravikumar Ramachandran | 2019-04-09 |
| 10243041 | Vertical fin field effect transistor with air gap spacers | Hari V. Mallela, Robert R. Robison, Reinaldo Vega | 2019-03-26 |
| 10242918 | Shallow trench isolation structures and contact patterning | Andrew M. Greene, Ravikumar Ramachandran | 2019-03-26 |
| 10211207 | Low resistance source/drain contacts for complementary metal oxide semiconductor (CMOS) devices | Praneet Adusumilli, Oleg Gluschenkov, Dechao Guo, Zuoguang Liu, Tenko Yamashita | 2019-02-19 |
| 10177167 | Hybrid substrate engineering in CMOS finFET integration for mobility improvement | Chia-Yu Chen, Bruce B. Doris, Hong He | 2019-01-08 |
| 10177039 | Shallow trench isolation structures and contact patterning | Andrew M. Greene, Ravikumar Ramachandran | 2019-01-08 |
| 10170485 | Three-dimensional stacked junctionless channels for dense SRAM | Michael A. Guillorn, Robert R. Robison, Reinaldo Vega | 2019-01-01 |
| 10170584 | Nanosheet field effect transistors with partial inside spacers | Michael A. Guillorn, Terence B. Hook, Robert R. Robison, Reinaldo Vega | 2019-01-01 |
| 10170543 | Vertical fin field effect transistor with air gap spacers | Hari V. Mallela, Robert R. Robison, Reinaldo Vega | 2019-01-01 |