| 10461172 |
Vertical transistors having improved gate length control using uniformly deposited spacers |
Christopher J. Waskiewicz, Hemanth Jagannathan, Yann Mignot |
2019-10-29 |
| 10410875 |
Alternating hardmasks for tight-pitch line formation |
Sean D. Burns, Nelson Felix, Chi-Chun Liu, Yann Mignot |
2019-09-10 |
| 10361129 |
Self-aligned double patterning formed fincut |
Yann Mignot, Christopher J. Waskiewicz, Hemanth Jagannathan, Eric R. Miller, Indira Seshadri |
2019-07-23 |
| 10312103 |
Alternating hardmasks for tight-pitch line formation |
Sean D. Burns, Nelson Felix, Chi-Chun Liu, Yann Mignot |
2019-06-04 |
| 10312346 |
Vertical transistor with variable gate length |
Brent A. Anderson, Bassem M. Hamieh, Junli Wang |
2019-06-04 |
| 10304744 |
Inverse tone direct print EUV lithography enabled by selective material deposition |
Praveen Joseph, Ekmini Anuja De Silva, Fee Li Lie, Yann Mignot, Indira Seshadri |
2019-05-28 |
| 10304689 |
Margin for fin cut using self-aligned triple patterning |
Gauri Karve, Fee Li Lie, Eric R. Miller, John R. Sporre, Sean Teehan |
2019-05-28 |
| 10249753 |
Gate cut on a vertical field effect transistor with a defined-width inorganic mask |
Brent A. Anderson, Sivananda K. Kanakasabapathy, Jeffrey C. Shearer, John R. Sporre, Junli Wang |
2019-04-02 |
| 10242952 |
Registration mark formation during sidewall image transfer process |
David J. Conklin, Allen H. Gabor, Sivananda K. Kanakasabapathy, Byeong Y. Kim, Fee Li Lie |
2019-03-26 |
| 10211321 |
Stress retention in fins of fin field-effect transistors |
Sivananda K. Kanakasabapathy, Gauri Karve, Juntao Li, Fee Li Lie, John R. Sporre |
2019-02-19 |
| 10211319 |
Stress retention in fins of fin field-effect transistors |
Sivananda K. Kanakasabapathy, Gauri Karve, Juntao Li, Fee Li Lie, John R. Sporre |
2019-02-19 |
| 10176997 |
Direct gate patterning for vertical transport field effect transistor |
Ekmini Anuja De Silva, Indira Seshadri, Wenyu Xu |
2019-01-08 |
