Issued Patents 2019
Showing 1–25 of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522636 | Fin field-effect transistor for input/output device integrated with nanosheet field-effect transistor | Chen Zhang, Peng Xu, Huiming Bu, Kangguo Cheng | 2019-12-31 |
| 10483166 | Vertically stacked transistors | Kangguo Cheng, Tenko Yamahita, Chen Zhang | 2019-11-19 |
| 10475905 | Techniques for vertical FET gate length control | Chi-Chun Liu, Robin Hsin Kuo Chao, Zhenxing Bi, Kristin Schmidt, Yann Mignot | 2019-11-12 |
| 10453824 | Structure and method to form nanosheet devices with bottom isolation | Shogo Mochizuki | 2019-10-22 |
| 10453937 | Self-limited inner spacer formation for gate-all-around field effect transistors | Robinhsinku Chao, Choonghyun Lee, Heng Wu, Jingyun Zhang | 2019-10-22 |
| 10431502 | Maskless epitaxial growth of phosphorus-doped Si and boron-doped SiGe (Ge) for advanced source/drain contact | Choonghyun Lee, Shogo Mochizuki, Hemanth Jagannathan | 2019-10-01 |
| 10431503 | Sacrificial cap for forming semiconductor contact | Praneet Adusumilli, Zuoguang Liu, Shogo Mochizuki, Jie Yang | 2019-10-01 |
| 10418288 | Techniques for forming different gate length vertical transistors with dual gate oxide | Ruqiang Bao, Shogo Mochizuki, Choonghyun Lee | 2019-09-17 |
| 10411120 | Self-aligned inner-spacer replacement process using implantation | Robin Hsin Kuo Chao, Michael A. Guillorn, Chi-Chun Liu, Shogo Mochizuki | 2019-09-10 |
| 10396177 | Prevention of extension narrowing in nanosheet field effect transistors | Tenko Yamashita, Chen Zhang | 2019-08-27 |
| 10373912 | Replacement metal gate processes for vertical transport field-effect transistor | Choonghyun Lee, Ruqiang Bao, Hemanth Jagannathan | 2019-08-06 |
| 10374034 | Undercut control in isotropic wet etch processes | Chi-Chun Liu, Muthumanickam Sankarapandian, Kristin Schmidt, Ekmini Anuja De Silva, Noel Arellano +2 more | 2019-08-06 |
| 10361269 | Forming bottom isolation layer for nanosheet technology | Chen Zhang | 2019-07-23 |
| 10355103 | Long channels for transistors | Robin Hsin Kuo Chao, Choonghyun Lee, Heng Wu, Jingyun Zhang | 2019-07-16 |
| 10332995 | Reduced resistance source and drain extensions in vertical field effect transistors | Peng Xu, Chen Zhang | 2019-06-25 |
| 10326001 | Self-limited inner spacer formation for gate-all-around field effect transistors | Robinhsinku Chao, Choonghyun Lee, Heng Wu, Jingyun Zhang | 2019-06-18 |
| 10325815 | Vertical transport fin field effect transistors having different channel lengths | Ruqiang Bao, Choonghyun Lee, Shogo Mochizuki | 2019-06-18 |
| 10312326 | Long channels for transistors | Robin Hsin Kuo Chao, Choonghyun Lee, Heng Wu, Jingyun Zhang | 2019-06-04 |
| 10297667 | Fin field-effect transistor for input/output device integrated with nanosheet field-effect transistor | Chen Zhang, Peng Xu, Huiming Bu, Kangguo Cheng | 2019-05-21 |
| 10297663 | Gate fill utilizing replacement spacer | Chen Zhang | 2019-05-21 |
| 10276695 | Self-aligned inner-spacer replacement process using implantation | Robin Hsin Kuo Chao, Michael A. Guillorn, Chi-Chun Liu, Shogo Mochizuki | 2019-04-30 |
| 10269957 | Reduced resistance source and drain extensions in vertical field effect transistors | Peng Xu, Chen Zhang | 2019-04-23 |
| 10256321 | Semiconductor device including enhanced low-k spacer | Kangguo Cheng, Zuoguang Liu | 2019-04-09 |
| 10243060 | Uniform low-k inner spacer module in gate-all-around (GAA) transistors | Robin Hsin Kuo Chao, Choonghyun Lee, Jingyun Zhang | 2019-03-26 |
| 10242919 | Vertical transport fin field effect transistors having different channel lengths | Ruqiang Bao, Choonghyun Lee, Shogo Mochizuki | 2019-03-26 |