Issued Patents 2019
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522654 | Gate tie-down enablement with inner spacer | Andre P. Labonte, Lars Liebmann, Sanjay C. Mehta | 2019-12-31 |
| 10497798 | Vertical field effect transistor with self-aligned contacts | Ruilong Xie, Steven Bentley, Puneet Harischandra Suvarna, Chanro Park, Min Gyu Sung +2 more | 2019-12-03 |
| 10490667 | Three-dimensional field effect device | Huimei Zhou, Shogo Mochizuki, Peng Xu, Nicolas Loubet | 2019-11-26 |
| 10490653 | Embedded bottom metal contact formed by a self-aligned contact process for vertical transistors | Zuoguang Liu, Heng Wu, Tenko Yamashita | 2019-11-26 |
| 10388602 | Local interconnect structure including non-eroded contact via trenches | Vimal Kamineni, Andre P. Labonte, Ruilong Xie | 2019-08-20 |
| 10332977 | Gate tie-down enablement with inner spacer | Andre P. Labonte, Lars Liebmann, Sanjay C. Mehta | 2019-06-25 |
| 10332971 | Replacement metal gate stack for diffusion prevention | Takashi Ando, Johnathan E. Faltermeier, Sivananda K. Kanakasabapathy, Injo Ok, Tenko Yamashita | 2019-06-25 |
| 10319835 | Embedded bottom metal contact formed by a self-aligned contact process for vertical transistors | Zuoguang Liu, Heng Wu, Tenko Yamashita | 2019-06-11 |
| 10312154 | Method of forming vertical FinFET device having self-aligned contacts | Ruilong Xie, Steven Bentley, Puneet Harischandra Suvarna, Chanro Park, Min Gyu Sung +2 more | 2019-06-04 |
| 10217664 | Reflow interconnect using Ru | Lawrence A. Clevenger, Huai Huang, Koichi Motoyama, Wei Wang, Chih-Chao Yang | 2019-02-26 |
| 10211101 | Reflow interconnect using Ru | Lawrence A. Clevenger, Huai Huang, Koichi Motoyama, Wei Wang, Chih-Chao Yang | 2019-02-19 |
| 10186599 | Forming self-aligned contact with spacer first | Andrew M. Greene, Sean Lian, Balasubramanian Pranatharthiharan, Mark V. Raymond, Ruilong Xie | 2019-01-22 |