Issued Patents 2019
Showing 1–23 of 23 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522639 | Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET device | Hui Zang, Daniel Jaeger, Veeraraghavan S. Basker, Christopher Nassar, Jinsheng Gao +1 more | 2019-12-31 |
| 10510613 | Contact structures | Jiehui Shu, Xusheng Wu, John H. Zhang, Pei Liu, Laertis Economikos | 2019-12-17 |
| 10483369 | Methods of forming replacement gate structures on transistor devices | Xusheng Wu, Jinsheng Gao | 2019-11-19 |
| 10460986 | Cap structure | Jinsheng Gao, Daniel Jaeger, Chih-Chiang Chang, Michael V. Aquilino, Patrick Carpenter +3 more | 2019-10-29 |
| 10453754 | Diffused contact extension dopants in a transistor device | Jianwei Peng, Qun Gao, Xin Wang | 2019-10-22 |
| 10453751 | Tone inversion method and structure for selective contact via patterning | Xiaofeng Qiu, Michael V. Aquilino, Patrick Carpenter, Jessica Dechene, Ming Hao Tang +1 more | 2019-10-22 |
| 10431500 | Multi-step insulator formation in trenches to avoid seams in insulators | Asli Sirman, Jiehui Shu, Chih-Chiang Chang, Huy Cao, Jinping Liu | 2019-10-01 |
| 10418455 | Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET device | Hui Zang, Daniel Jaeger, Veeraraghavan S. Basker, Christopher Nassar, Jinsheng Gao +1 more | 2019-09-17 |
| 10418272 | Methods, apparatus, and system for a semiconductor device comprising gates with short heights | Jiehui Shu, Garo Derderian, Hui Zang, John H. Zhang, Jinping Liu | 2019-09-17 |
| 10403734 | Semiconductor device with reduced gate height budget | Hui Zang | 2019-09-03 |
| 10388562 | Composite contact etch stop layer | Daniel Jaeger, Xusheng Wu, Jinsheng Gao | 2019-08-20 |
| 10347729 | Device for improving performance through gate cut last process | Xusheng Wu | 2019-07-09 |
| 10325819 | Methods, apparatus and system for providing a pre-RMG replacement metal contact for a finFET device | Jinsheng Gao, Daniel Jaeger, Michael V. Aquilino, Patrick Carpenter, Jessica Dechene +2 more | 2019-06-18 |
| 10269654 | Methods, apparatus and system for replacement contact for a finFET device | Jinsheng Gao, Daniel Jaeger, Michael V. Aquilino, Patrick Carpenter, Jessica Dechene +2 more | 2019-04-23 |
| 10262942 | Method of forming cobalt contact module and cobalt contact module formed thereby | Qiang Fang, Shafaat Ahmed, Changhong Wu, Dinesh R. Koli | 2019-04-16 |
| 10256089 | Replacement contact cuts with an encapsulated low-K dielectric | Huy Cao, Jinsheng Gao, Tai Fong Chao | 2019-04-09 |
| 10229999 | Methods of forming upper source/drain regions on a vertical transistor device | Xusheng Wu, John H. Zhang, Jiehui Shu | 2019-03-12 |
| 10217846 | Vertical field effect transistor formation with critical dimension control | Ruilong Xie, Steven Bentley, Min Gyu Sung, Chanro Park, Steven R. Soss +8 more | 2019-02-26 |
| 10211315 | Vertical field-effect transistor having a dielectric spacer between a gate electrode edge and a self-aligned source/drain contact | Hui Zang | 2019-02-19 |
| 10211103 | Advanced structure for self-aligned contact and method for producing the same | Dinesh R. Koli, Yuan Zhou, Xingzhao Shi, Chih-Chiang Chang, Tai Fong Chao | 2019-02-19 |
| 10204784 | Methods of forming features on integrated circuit products | Jinsheng Gao, Hui Zang | 2019-02-12 |
| 10204797 | Methods, apparatus, and system for reducing step height difference in semiconductor devices | Jinsheng Gao, Daniel Jaeger, Michael V. Aquilino, Patrick Carpenter, Junsic Hong +1 more | 2019-02-12 |
| 10176995 | Methods, apparatus and system for gate cut process using a stress material in a finFET device | Xusheng Wu | 2019-01-08 |