GW

Geng Wang

IBM: 12 patents #348 of 11,143Top 4%
Globalfoundries: 2 patents #191 of 837Top 25%
Overall (2019): #4,528 of 560,194Top 1%
14
Patents 2019

Issued Patents 2019

Showing 1–14 of 14 patents

Patent #TitleCo-InventorsDate
10504890 High density nanosheet diodes Kangguo Cheng, Juntao Li, Qintao Zhang 2019-12-10
10403772 Electrical and optical via connections on a same chip Juntao Li, Kangguo Cheng, Chengwen Pei, Joseph Ervin 2019-09-03
10396169 Nanosheet transistors having different gate dielectric thicknesses on the same chip Kangguo Cheng, Juntao Li, Qintao Zhang 2019-08-27
10290574 Embedded metal-insulator-metal (MIM) decoupling capacitor in monolitic three-dimensional (3D) integrated circuit (IC) structure Kangguo Cheng, Chengwen Pei, Juntao Li 2019-05-14
10269790 Forming horizontal bipolar junction transistor compatible with nanosheets Kangguo Cheng, Juntao Li, Qintao Zhang 2019-04-23
10249539 Nanosheet transistors having different gate dielectric thicknesses on the same chip Kangguo Cheng, Juntao Li, Qintao Zhang 2019-04-02
10249709 Stacked nanosheet field effect transistor device with substrate isolation Kangguo Cheng, Juntao Li, Qintao Zhang 2019-04-02
10243054 Integrating standard-gate and extended-gate nanosheet transistors on the same substrate Kangguo Cheng, Juntao Li, Qintao Zhang 2019-03-26
10236382 Multiple finFET formation with epitaxy separation Kangguo Cheng, Juntao Li, Qintao Zhang 2019-03-19
10236381 IFinFET Kangguo Cheng, Juntao Li, Qintao Zhang 2019-03-19
10229920 One-time programmable vertical field-effect transistor Kangguo Cheng, Qintao Zhang, Juntao Li 2019-03-12
10229919 Vertical field effect transistor including integrated antifuse Kangguo Cheng, Juntao Li, Qintao Zhang 2019-03-12
10224329 Forming gates with varying length using sidewall image transfer Kangguo Cheng, Juntao Li, Qintao Zhang 2019-03-05
10224334 Anti-fuse with reduced programming voltage Kangguo Cheng, Juntao Li, Chengwen Pei 2019-03-05