Issued Patents 2019
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522549 | Uniform gate dielectric for DRAM device | Baonian Guo | 2019-12-31 |
| 10504890 | High density nanosheet diodes | Kangguo Cheng, Juntao Li, Geng Wang | 2019-12-10 |
| 10396169 | Nanosheet transistors having different gate dielectric thicknesses on the same chip | Kangguo Cheng, Juntao Li, Geng Wang | 2019-08-27 |
| 10269790 | Forming horizontal bipolar junction transistor compatible with nanosheets | Kangguo Cheng, Juntao Li, Geng Wang | 2019-04-23 |
| 10256150 | Fabricating Fin-based split-gate high-drain-voltage transistor by work function tuning | Dechao Guo, Liyang Song, Xinhui Wang | 2019-04-09 |
| 10249539 | Nanosheet transistors having different gate dielectric thicknesses on the same chip | Kangguo Cheng, Juntao Li, Geng Wang | 2019-04-02 |
| 10249709 | Stacked nanosheet field effect transistor device with substrate isolation | Kangguo Cheng, Juntao Li, Geng Wang | 2019-04-02 |
| 10243054 | Integrating standard-gate and extended-gate nanosheet transistors on the same substrate | Kangguo Cheng, Juntao Li, Geng Wang | 2019-03-26 |
| 10236382 | Multiple finFET formation with epitaxy separation | Kangguo Cheng, Juntao Li, Geng Wang | 2019-03-19 |
| 10236381 | IFinFET | Kangguo Cheng, Juntao Li, Geng Wang | 2019-03-19 |
| 10229920 | One-time programmable vertical field-effect transistor | Kangguo Cheng, Juntao Li, Geng Wang | 2019-03-12 |
| 10229919 | Vertical field effect transistor including integrated antifuse | Kangguo Cheng, Juntao Li, Geng Wang | 2019-03-12 |
| 10224329 | Forming gates with varying length using sidewall image transfer | Kangguo Cheng, Juntao Li, Geng Wang | 2019-03-05 |
| 10170368 | Fabricating fin-based split-gate high-drain-voltage transistor by work function tuning | Dechao Guo, Liyang Song, Xinhui Wang | 2019-01-01 |