Issued Patents All Time
Showing 26–50 of 67 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7199032 | Metal silicide induced lateral excessive encroachment reduction by silicon <110> channel stuffing | Duofeng Yue, Peijun Chen, Sue Crank, Thomas D. Bonifield, Jie Xu | 2007-04-03 |
| 7198705 | Plating-rinse-plating process for fabricating copper interconnects | Linlin Chen, Changfeng Xia | 2007-04-03 |
| 7183187 | Integration scheme for using silicided dual work function metal gates | Gregory B. Shinn, Ping Jiang | 2007-02-27 |
| 7148143 | Semiconductor device having a fully silicided gate electrode and method of manufacture therefor | Haowen Bu, Shaofeng Yu, Ping Jiang, Clint Montgomery | 2006-12-12 |
| 7101788 | Semiconductor devices and methods of manufacturing such semiconductor devices | Patricia B. Smith | 2006-09-05 |
| 7098094 | NiSi metal gate stacks using a boron-trap | — | 2006-08-29 |
| 7029967 | Silicide method for CMOS integrated circuits | Song Zhao, Sue Crank, Amitava Chatterjee, Kaiping Liu, Donald Miles +2 more | 2006-04-18 |
| 6958290 | Method and apparatus for improving adhesion between layers in integrated devices | Richard Allen Faust, Qing Jiang | 2005-10-25 |
| 6927159 | Methods for providing improved layer adhesion in a semiconductor device | Richard Allen Faust | 2005-08-09 |
| 6903000 | System for improving thermal stability of copper damascene structure | Qi-Zhong Hong, Tz-Cheng Chiu, Changming Jin, David Permana, Ting Tsui | 2005-06-07 |
| 6861695 | High-k dielectric materials and processes for manufacturing them | Ming-Jang Hwang | 2005-03-01 |
| 6831008 | Nickel silicide—silicon nitride adhesion through surface passivation | Glenn J. Tessmer, Melissa Hewson, Donald Miles, Ralf B. Willecke, Andrew John McKerrow +2 more | 2004-12-14 |
| 6800547 | Integrated circuit dielectric and method | Changming Jin | 2004-10-05 |
| 6787429 | High-K dielectric materials and processes for manufacturing them | Ming-Jang Hwang | 2004-09-07 |
| 6784093 | Copper surface passivation during semiconductor manufacturing | Changfeng Xia | 2004-08-31 |
| 6784104 | Method for improved cu electroplating in integrated circuit fabrication | Qing Jiang | 2004-08-31 |
| 6743719 | Method for forming a conductive copper structure | Linlin Chen, Changfeng Xia | 2004-06-01 |
| 6734099 | System for preventing excess silicon consumption in ultra shallow junctions | Jin Zhao, Yuqing Xu | 2004-05-11 |
| 6730597 | Pre-ECD wet surface modification to improve wettability and reduced void defect | Linlin Chen, David Gonzalez, Honglin Guo | 2004-05-04 |
| 6709974 | Method of preventing seam defects in isolated lines | David Permana, Albert Cheng, Jeff West, Brock W. Fairchild, Scott Alexander JOHANNESMEYER +3 more | 2004-03-23 |
| 6680249 | Si-rich surface layer capped diffusion barriers | Wei-Yung Hsu, Qi-Zhong Hong, Richard Allen Faust | 2004-01-20 |
| 6641867 | Methods for chemical vapor deposition of tungsten on silicon or dielectric | Wei-Yung Hsu, August Fischer, Ming-Jang Hwang | 2003-11-04 |
| 6630394 | System for reducing silicon-consumption through selective deposition | Jin Zhao, Yuqing Xu | 2003-10-07 |
| 6624066 | Reliable interconnects with low via/contact resistance | Ching-Te Lin | 2003-09-23 |
| 6583053 | Use of a sacrificial layer to facilitate metallization for small features | Changming Jin, David Permana | 2003-06-24 |