Issued Patents All Time
Showing 26–50 of 126 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10439041 | Fringe capacitance reduction for replacement gate CMOS | Mahalingam Nandakumar | 2019-10-08 |
| 10381442 | Low resistance source drain contact formation | Oleg Gluschenkov, Zuoguang Liu, Shogo Mochizuki, Chun-Chen Yeh | 2019-08-13 |
| 10347581 | Contact formation in semiconductor devices | Oleg Gluschenkov, Jiseok Kim, Zuoguang Liu, Shogo Mochizuki | 2019-07-09 |
| 10319722 | Contact formation in semiconductor devices | Oleg Gluschenkov, Zuoguang Liu, Joseph S. Washington, Tenko Yamashita | 2019-06-11 |
| 10249502 | Low resistance source drain contact formation with trench metastable alloys and laser annealing | Oleg Gluschenkov, Zuoguang Liu, Shogo Mochizuki, Tenko Yamashita, Chun-Chen Yeh | 2019-04-02 |
| 10243073 | Vertical channel field-effect transistor (FET) process compatible long channel transistors | Brent A. Anderson, Steven Bentley, Kwan-Yong Lim, Junli Wang | 2019-03-26 |
| 10236218 | Methods, apparatus and system for forming wrap-around contact with dual silicide | Ruilong Xie, Julien Frougier, Nigel G. Cave, Xusheng Wu | 2019-03-19 |
| 10236292 | Complementary FETs with wrap around contacts and methods of forming same | Julien Frougier, Ruilong Xie, Puneet Harischandra Suvarna, Steven Bentley, Ali Razavieh | 2019-03-19 |
| 10211094 | Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts | Shariq Siddiqui, Tenko Yamashita | 2019-02-19 |
| 10192867 | Complementary FETs with wrap around contacts and method of forming same | Julien Frougier, Ruilong Xie, Puneet Harischandra Suvarna, Steven Bentley, Ali Razavieh | 2019-01-29 |
| 10170574 | Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts | Shariq Siddiqui, Tenko Yamashita | 2019-01-01 |
| 10170617 | Vertical transport field effect transistors | Jiseok Kim, Hoon Kim, Puneet Harischandra Suvarna, Steven Bentley, Jody A. Fronheiser | 2019-01-01 |
| 10163725 | High mobility transistors | Manoj Mehrotra, Charles Frank Machala, III, Rick L. Wise | 2018-12-25 |
| 10153201 | Method for making a dipole-based contact structure to reduce the metal-semiconductor contact resistance in MOSFETs | Huiming Bu, Hui-feng Li, Vijay Narayanan, Tenko Yamashita | 2018-12-11 |
| 10141446 | Formation of bottom junction in vertical FET devices | Kwan-Yong Lim, Steven Bentley, Daniel Chanemougame | 2018-11-27 |
| 10115824 | Forming a contact for a semiconductor device | Oleg Gluschenkov, Zuoguang Liu, Shogo Mochizuki, Ruilong Xie | 2018-10-30 |
| 10068983 | High-K metal gate | James Joseph Chambers | 2018-09-04 |
| 10068771 | System and method for mitigating oxide growth in a gate dielectric | Malcolm J. Bevan, Haowen Bu, Husam N. Alshareef | 2018-09-04 |
| 10056334 | Dual metal-insulator-semiconductor contact structure and formulation method | Takashi Ando, Tenko Yamashita | 2018-08-21 |
| 9972682 | Low resistance source drain contact formation | Oleg Gluschenkov, Zuoguang Liu, Shogo Mochizuki, Chun-Chen Yeh | 2018-05-15 |
| 9960162 | Hybrid high-k first and high-k last replacement gate process | Manoj Mehrotra, Mahalingam Nandakumar | 2018-05-01 |
| 9917060 | Forming a contact for a semiconductor device | Oleg Gluschenkov, Zuoguang Liu, Shogo Mochizuki, Ruilong Xie | 2018-03-13 |
| 9911738 | Vertical-transport field-effect transistors with a damascene gate strap | Kwan-Yong Lim, Brent A. Anderson, Junli Wang | 2018-03-06 |
| 9892927 | System and method for mitigating oxide growth in a gate dielectric | Malcolm J. Bevan, Haowen Bu, Husam N. Alshareef | 2018-02-13 |
| 9853115 | Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts | Shariq Siddiqui, Tenko Yamashita | 2017-12-26 |