Issued Patents All Time
Showing 76–100 of 126 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9337046 | System and method for mitigating oxide growth in a gate dielectric | Malcolm J. Bevan, Haowen Bu, Husam N. Alshareef | 2016-05-10 |
| 9324717 | High mobility transistors | Manoj Mehrotra, Rick L. Wise | 2016-04-26 |
| 9269636 | High quality dielectric for hi-k last replacement gate transistors | Mahalingam Nandakumar | 2016-02-23 |
| 9224638 | Integrated circuits with metal-titanium oxide contacts and fabrication methods | Kisik Choi, Hoon Kim, Andy Wei, Guillaume Bouche | 2015-12-29 |
| 9202884 | Methods to enhance effective work function of mid-gap metal by incorporating oxygen and hydrogen at a low thermal budget | James Joseph Chambers | 2015-12-01 |
| 9177806 | System and method for mitigating oxide growth in a gate dielectric | Malcolm J. Bevan, Haowen Bu, Husam N. Alshareef | 2015-11-03 |
| 9087918 | Structure and method for metal gate stack oxygen concentration control using an oxygen diffusion barrier layer and a sacrificial oxygen gettering layer | James Joseph Chambers | 2015-07-21 |
| 9070785 | High-k / metal gate CMOS transistors with TiN gates | Brian K. Kirkpatrick | 2015-06-30 |
| 9054056 | Transistor performance using a two-step damage anneal | Jarvis Benjamin Jacobs, Ajith Varghese | 2015-06-09 |
| 9029251 | Transistor performance using a two-step damage anneal | Jarvis Benjamin Jacobs, Ajith Varghese | 2015-05-12 |
| 9000539 | Metal-gate MOS transistor and method of forming the transistor with reduced gate-to-source and gate-to-drain overlap capacitance | Manoj Mehrotra | 2015-04-07 |
| 8828825 | Method of substantially reducing the formation of SiGe abnormal growths on polycrystalline electrodes for strained channel PMOS transistors | James Joseph Chambers | 2014-09-09 |
| 8828855 | Transistor performance using a two-step damage anneal | Jarvis Benjamin Jacobs, Ajith Varghese | 2014-09-09 |
| 8816446 | Formation of metal gate electrode using rare earth alloy incorporated into mid gap metal | Manuel Quevedo-Lopez | 2014-08-26 |
| 8802577 | Method for manufacturing a semiconductor device using a nitrogen containing oxide layer | Jarvis Benjamin Jacobs, Reima Laaksonen | 2014-08-12 |
| 8803253 | Replacement metal gate process for CMOS integrated circuits | Seung-Chul Song | 2014-08-12 |
| 8748996 | Semiconductor device including SiON gate dielectric with portions having different nitrogen concentrations | James Joseph Chambers, Brian K. Kirkpatrick | 2014-06-10 |
| 8658489 | Method for dual work function metal gate CMOS with selective capping | James Joseph Chambers | 2014-02-25 |
| 8643113 | Structure and method for metal gate stack oxygen concentration control using an oxygen diffusion barrier layer and a sacrificial oxygen gettering layer | James Joseph Chambers | 2014-02-04 |
| 8617954 | Formation of nitrogen containing dielectric layers having an improved nitrogen distribution | Manoj Mehrotra | 2013-12-31 |
| 8536654 | Structure and method for dual work function metal gate CMOS with selective capping | James Joseph Chambers | 2013-09-17 |
| 8492291 | Formation of gate dielectrics with uniform nitrogen distribution | Reima Laaksonen | 2013-07-23 |
| 8482080 | Engineered oxygen profile in metal gate electrode and nitrided high-K gate dielectrics structure for high performance PMOS devices | Huang-Chun Wen | 2013-07-09 |
| 8441078 | Semiconductor device including SiON gate dielectric with portions having different nitrogen concentrations | James Joseph Chambers, Brian K. Kirkpatrick | 2013-05-14 |
| 8216913 | Strain modulation in active areas by controlled incorporation of nitrogen at si-SiO2 interface | Elisabeth Marley | 2012-07-10 |